PD - 90673B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7450
IRHM3450
IRHM4450
IRHM8450
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.45Ω
0.45Ω
0.45Ω
0.45Ω
I
D
11A
11A
11A
11A
IRHM7450
JANSR2N7270
500V, N-CHANNEL
REF: MIL-PRF-19500/603
®
RAD-Hard HEXFET
TECHNOLOGY
™
QPL Part Number
JANSR2N7270
JANSF2N7270
JANSG2N7270
JANSH2N7270
TO-254AA
International Rectifier’s RAD-Hard
TM
HEXFET
®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
11
7.0
44
150
1.2
±20
500
11
15
3.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
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05/18/06
1
IRHM7450, JANSR2N7270
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
500
—
—
—
2.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
—
—
0.45
0.50
4.0
—
50
250
100
-100
150
30
75
45
190
190
130
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 7.0A
VGS = 12V, ID = 11A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.0A
VDS= 400V,VGS=0V
VDS = 400V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 11A
VDS = 250V
VDD = 250V, ID = 11A,
VGS = 12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
330
52
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
11
44
1.6
1100
16
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 11A, VGS = 0V
Ã
Tj = 25°C, IF = 11A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max
—
—
—
— 0.83
0.21 —
—
48
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM7450, JANSR2N7270
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (TO-254AA)
Diode Forward Voltage
Ã
100K Rads(Si)
1
300 K- 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
V
GS
= 12V, I
D
= 7.0A
V
GS
= 12V, I
D
= 7.0A
V
GS
= 0V, IS = 11A
Min
500
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
50
0.45
0.45
1.6
Min
500
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.6
0.6
1.6
1. Part number IRHM7450 (JANSR2N7270)
2. Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) and IRHM8450 (JANSH2N7270)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Ni
LET
(MeV/(mg/cm ))
28
2
Energy
(MeV)
265
Range
(µm)
41
@ VGS=0V
@VGS=-5V
V
DS
(V)
@VGS=-10V @VGS=-15V @VGS=-20V
275
275
-
-
-
400
300
VDS
200
100
0
0
-5
-10
VGS
-15
-20
Ni
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7450, JANSR2N7270
Post-Irradiation
Pre-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2.
Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
Pre-Irradiation
IRHM7450, JANSR2N7270
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a.
Gate Stress of
V
GSS
Equals 12 Volts
During Radiation
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8b.
V
DSS
Stress
Equals 80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
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