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1H4-TP-HF

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size368KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

1H4-TP-HF Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

1H4-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
1H1
THRU
1H7
1.0 Amp High
Efficient Rectifier
50 - 1000 Volts
R-1
Features
Halogen
free available upon request by adding suffix "-HF"
Low Leakage Current
Fast Switching for High Efficiency
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
O
O
Maximum Ratings
Operating Temperature: -55 C to +125 C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance; 60
O
C/W Junction To Case
18
O
C/W Junction To Ambient
MCC Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
O
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
1H1
1H2
1H3
1H4
1H5
1H6
1H7
1H1
1H2
1H3
1H4
1H5
1H6
1H7
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
O
D
A
Cathode Mark
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
1H1-4
1H5
1H6-1H7
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
1H1-1H5
1H6-1H7
Typical Junction
Capacitance
1H1-1H5
1H6-1H7
I
F(AV)
I
FSM
1.0A
30A
T
A
= 55 C
8.3ms, half sine
D
B
V
F
1.0V
1.3V
1.7V
5.0uA
150uA
I
FM
= 1.0A;
T
J
= 25
O
C
T
J
= 25
O
C
T
J
= 125
O
C
DIM
MIN
MAX
0.140
0.102
0.024
-----
MIN
2.90
2.30
0.50
20.00
C
I
R
DIMENSIONS
INCHES
MM
NOTE
MAX
3.50
2.60
0.60
-----
0.116
0.091
0.020
0.787
Trr
50ns
75ns
I
F
=0.5A, I
R
=1.0A
I
RR
=0.25A
A
B
C
C
J
D
20pF
15pF
Measured at
1.0MHz, V
R
=4.0V
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision: B
www.mccsemi.com
1 of 2
2013/01/01

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