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259RW30

Description
Silicon Controlled Rectifier, 390000mA I(T), 300V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size78KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

259RW30 Overview

Silicon Controlled Rectifier, 390000mA I(T), 300V V(DRM)

259RW30 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum DC gate trigger current100 mA
Maximum DC gate trigger voltage2.5 V
JESD-30 codeO-MUPM-D1
Maximum leakage current20 mA
On-state non-repetitive peak current4500 A
Number of terminals1
Maximum on-state current390000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Off-state repetitive peak voltage300 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1
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