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IRKC166-08-N

Description
165A, 800V, SILICON, RECTIFIER DIODE, POWER, INT-A-PAK-3
CategoryDiscrete semiconductor    diode   
File Size187KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKC166-08-N Overview

165A, 800V, SILICON, RECTIFIER DIODE, POWER, INT-A-PAK-3

IRKC166-08-N Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionPOWER, INT-A-PAK-3
Contacts3
Reach Compliance Codecompliant
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationHIGH VOLTAGE POWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.57 V
JESD-30 codeR-XUFM-X3
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Maximum non-repetitive peak forward current4200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current165 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current50000 µA
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
I27096 rev. B 10/99
IRK. SERIES
STANDARD RECOVERY DIODES
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
INT-A-pakä Power Modules
165 A
195 A
230 A
Description
These series of INT-A-paks uses high voltage power
diodes in two basic configurations. The semiconductors
are electrically isolated from the metal base, allowing
common heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or three
phase bridges and the single diode module can be used
in conjunction with the thyristor modules as a freewheel
diode. These modules are intended for general purpose
applications such as battery chargers, welders and plat-
ing equipment and where high voltage and high current
are required (motor drives, etc.).
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
T
J
range
IRK.165.. IRK.195.. IRK.235..
Units
IRK.166.. IRK.196.. IRK.236..
165
100
260
4000
4200
80
73
1130
195
100
305
4750
4980
113
103
1130
230
100
360
6540
6850
214
195
2140
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
°C
up to 2000 up to 2000 up to 2400
- 40 to 150
www.irf.com
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