SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTD1854T.
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
E
K
B
DIM
A
B
G
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
A
F
D
1
E
F
G
H
I
J
K
L
C
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*
T
j
T
stg
0.8
RATING
-80
-50
-10
-200
-400
0.9
150
-55 150
)
UNIT
V
V
V
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
Marking
EQUIVALENT CIRCUIT
COLLECTOR
Type Name
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=-60V, I
E
=0
V
EB
=-8V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
C
=-10 A, I
C
=0
V
CE
=-2V, I
C
=-10mA
V
CE
=-2V, I
C
=-100mA
I
C
=-100mA, I
B
=-100 A
I
C
=-100mA, I
B
=-100 A
MIN.
-
-
-80
-50
-10
5000
3000
-
-
-
-
-0.9
-1.5
-
-
-1.5
-2.0
V
V
TYP.
-
-
MAX.
-100
-100
UNIT
nA
nA
V
V
V
2001. 10. 23
Revision No : 0
I
MAXIMUM RATINGS (Ta=25
)
L
G
H
J
TSM
Lot No.
SY
1/2
KTB1234T
I
C
- V
CE
-100
COLLECTOR CURRENT I
C
(mA)
-80
-60
-40
-20
0
0
-1
-2
-3
-4
-7
µ
A
-
6µ
A
h
FE
- I
C
100K
DC CURRENT GAIN h
FE
50K
30K
Ta=75 C
Ta=25 C
V
CE
=-2V
-5
µ
A
-4
µA
-3µA
-2µA
-1µA
I
B
=0µA
10K
5K
3K
Ta=-25 C
-5
1K
-1
-3
-10
-30
-100
-200
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-3
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
I
C
/I
B
=1000
V
BE(sat)
- I
C
-5
-3
I
C
/I
B
=1000
-1
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=-25 C
Ta=25 C
-0.5
-0.3
-0.2
-10
Ta=75 C
-1
-0.5
-30
-50
-100
-300
-10
-30
-50
-100
-300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
I
C
- V
BE
COLLECTOR POWER DISSIPATION
P
C
(W)
-200
COLLECTOR CURRENT I
C
(mA)
V
CE
=-2V
Pc - Ta
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
MOUNTED ON A
CERAMIC BOARD
(600mm
2
0.8mm)
-160
-120
-80
-40
0
-0.6
25 C
Ta=-
5 C
5 C
Ta=2
-0.8
-1.0
-1.2
Ta=7
-1.4
-1.6
-1.8
BASE-EMITTER VOLTAGE V
BE
(V)
AMBIENT TEMPERATURE Ta ( C)
2001. 10. 23
Revision No : 0
2/2
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