IDP12E120
IDB12E120
Fast Switching EmCon Diode
Feature
•
1200 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
P-TO220-3.SMD
1200
12
1.65
150
P-TO220-2-2.
V
A
V
°C
Type
IDP12E120
IDB12E120
Package
P-TO220-2-2.
Ordering Code
Q67040-S4389
Marking
D12E120
D12E120
Pin 1
C
NC
PIN 2
A
C
PIN 3
-
A
P-TO220-3.SMD Q67040-S4385
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
1200
28
17
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
63
42.5
W
96
46
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
j ,
T
stg
T
S
-55...+150
260
°C
°C
Rev.2
Page 1
2003-07-31
IDP12E120
IDB12E120
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
35
max.
1.3
62
62
-
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=1200V,
T
j
=25°C
V
R
=1200V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.65
1.7
100
1000
V
2.15
-
Forward voltage drop
I
F
=12A,
T
j
=25°C
I
F
=12A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP12E120
IDB12E120
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
150
215
225
17
20.9
21.5
1200
1840
2025
5
5.8
5.9
-
-
-
A
-
-
-
nC
-
-
-
-
-
-
Peak reverse current
V
R
=800V,
I
F
= 12 A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=25°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=125°C
V
R
=800V,
I
F
=12A, di
F
/dt=800A/µs,
T
j
=150°C
Rev.2
Page 3
2003-07-31
IDP12E120
IDB12E120
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
150°C
100
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
150°C
30
W
A
80
70
P
tot
20
60
50
40
30
20
10
0
25
I
F
15
10
5
50
75
100
150
0
25
°C
T
C
50
75
100
°C
T
C
150
3 Typ. diode forward current
I
F
=
f
(V
F
)
36
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2.4
24A
A
28
24
-55°C
25°C
100°C
150°C
V
2
V
F
1.8
I
F
20
16
12
12A
1.6
6A
1.4
8
4
0
0
1.2
0.5
1
1.5
2
V
V
F
3
1
-60
-20
20
60
100
160
°C
T
j
Rev.2
Page 4
2003-07-31
IDP12E120
IDB12E120
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
800
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125 °C
2500
ns
24A
12A
6A
nC
24A
2300
2200
600
500
Q
rr
2100
2000
12A
t
rr
400
1900
1800
300
1700
200
1600
1500
100
1400
0
200
300
400
500
600
700
800
6A
A/µs
1000
di
F
/dt
1300
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
26
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
15
A
13
22
20
12
11
24A
12A
6A
I
rr
18
16
14
12
10
8
6
200
S
24A
12A
6A
300
400
500
600
700
800
10
9
8
7
6
5
4
3
A/µs
1000
di
F
/dt
2
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev.2
Page 5
2003-07-31
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