BAW156...
Silicon Low Leakage Diode
•
Low-leakage applications
•
Medium speed switching times
•
Common anode configuration
BAW156
!
,
,
Type
BAW156
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Package
SOT23
Configuration
common anode
Symbol
V
R
V
RM
I
F
I
FRM
I
FSM
4.5
0.5
P
tot
T
j
T
stg
Symbol
R
thJS
Marking
JZs
Value
80
85
200
-
mA
-
A
Unit
V
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Repetitive peak forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
Total power dissipation
T
s
≤
31°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAW156
1
For
250
150
-65 ... 150
mW
°C
Value
≤
360
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2005-10-18
BAW156...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 75 V
V
R
= 75 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
I
R
-
-
V
F
-
-
-
-
-
-
-
-
900
1000
1100
1250
-
-
5
80
nA
mV
C
T
t
rr
-
-
2
0.6
-
1.5
pF
µs
Pulse generator:
t
p
= 10µs,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
≤
1pF
EHN00019
2
2005-10-18
Package SOT23
BAW156...
Package Outline
0.15 MIN.
1
±0.1
0.1 MAX.
1.3
±0.1
2.9
±0.1
3
B
2.4
±0.15
10˚ MAX.
1)
0.4
+0.1
-0.05
1
2
10˚ MAX.
C
0.95
1.9
0.08...0.1
A
5
0...8˚
0.25
M
B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout
Manufacturer
12
s
Pin 1
0.9
1.3
Date code (Year/Month)
EH
s
Example
37
2003, July
Type code
BCW66
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
2.13
2.65
0.2
8
Pin 1
3.15
1.15
5
2005-10-18
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