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BCW71R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size168KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BCW71R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW71R Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
BCW71
BCW72
BCW71R
BCW72R
– K1
– K2
– K4
– K5
BCW71
BCW72
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Cut-Off
Current
Base-Emitter Voltage
SYMBOL MIN.
I
CBO
V
BE
550
120
210
750
850
110
200
Transition Frequency
Collector Capacitance
Noise Figure
f
T
C
TC
N
90
150
300
4
10
220
450
MHz
pF
dB
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
TOT
tj:tstg
TYP.
VALUE
50
45
5
200
100
330
-55 to +150
MAX. UNIT
100
10
700
250
µ
A
SOT23
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
E
=0, V
CB
=20V
I
E
=0,
V
CB
=20V,T
j
=100°C
I
C
=2.0mA, V
CE
=5V
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
f =35MHz
I
E
=I
e
=0, V
CB
=10V
f =1MHz
I
C
=200
µ
A, V
CE
=5V
R
S
=2K
, f =1KHz
B =200Hz
nA
mV
mV
mV
mV
mV
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter Saturation
Voltage
Static Forward
BCW71
Current Transfer
Ratio
BCW72
V
BE(sat)
h
FE
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
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