Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18
| Parameter Name | Attribute value |
| Maker | Micross |
| Parts packaging code | LCC |
| package instruction | QCCN, |
| Contacts | 18 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 150 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-CQCC-N18 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 18 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX4 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | QUAD |
| Base Number Matches | 1 |
| 5962-9213203MXX | 5962-9213201MYX | 5962-9213202MYX | 5962-9213201MXX | 5962-9213203MYX | 5962-9213203MVX | 5962-9213202MVX | 5962-9213201MVX | |
|---|---|---|---|---|---|---|---|---|
| Description | Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 150ns, CMOS, CDIP18, 0.400 INCH, CERAMIC, DIP-18 | Fast Page DRAM, 64KX4, 120ns, CMOS, CDIP18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CDIP18, 0.400 INCH, CERAMIC, DIP-18 |
| package instruction | QCCN, | QCCN, | CERAMIC, LCC-18 | QCCN, | QCCN, | DIP, | DIP, | DIP, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| Maximum access time | 150 ns | 100 ns | 120 ns | 100 ns | 150 ns | 150 ns | 120 ns | 100 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-CQCC-N18 | R-CQCC-N18 | R-CQCC-N18 | R-CQCC-N18 | R-CQCC-N18 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN | QCCN | QCCN | QCCN | QCCN | DIP | DIP | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | YES | YES | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | QUAD | QUAD | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Maker | Micross | - | Micross | - | Micross | Micross | - | Micross |
| Parts packaging code | LCC | LCC | LCC | LCC | LCC | DIP | - | DIP |
| Contacts | 18 | 18 | 18 | 18 | 18 | 18 | - | 18 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | - | e0 |
| Filter level | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | - | MIL-STD-883 |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - | TIN LEAD |