Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Objectid | 106562301 |
| package instruction | , |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Configuration | SINGLE |
| Maximum drain current (ID) | 15 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Number of components | 1 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 150 W |
| surface mount | NO |