BAS31L99Z datasheet, PDF - EEWORLD Datasheet

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BAS31L99Z: DescriptionRectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size27KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BAS31L99Z Overview

Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon

BAS31L99Z Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	120 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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BAS31

Connection Diagram

L21

SOT-23

Small Signal Diode

Absolute Maximum Ratings*

Symbol

RRM

F(AV)

FSM

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

Value

120

200

1.0

2.0

-55 to +150

150

Units

°C

stg

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

= 25°C unless otherwise noted

Parameter

Value

350

357

Units

°C/W

Electrical Characteristics

Symbol

Parameter

Breakdown Voltage

Forward Voltage

Test Conditions

= 1.0 mA

= 10 mA

= 50 mA

= 100 mA

= 200 mA

= 400 mA

= 90 V

= 90 V, T

= 150°C

= 0, f = 1.0 MHz

= I

= 30 mA, I

= 3.0 mA,

= 100

Ω

Min

120

Max

750

840

900

1.0

1.25

100

Units

µA

Reverse Current

Total Capacitance

Reverse Recovery Time

2001

Fairchild Semiconductor Corporation

BAS31, Rev. C

BAS31L99Z Related Products

	BAS31L99Z	BAS31_D87Z	BAS31D87Z	BAS31S62Z
Description	Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon	diodes - general purpose, power, switching high voltage general purpose	DIODE 0.2 A, 120 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN, Signal Diode	Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	compli	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	2	2	2
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.35 W	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	120 V	120 V	120 V	120 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1

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