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BZX85C11A0G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size346KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX85C11A0G Overview

Zener Diode

BZX85C11A0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
BZX85C3V3 - BZX85C56
Taiwan Semiconductor
Small Signal Product
5% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 3.3V to 56V
- VZ Tolerance selection of ±5%
- Designed for through-hole device type mounting
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
DO-41
Hermetically Sealed Glass
MECHANICAL DATA
- Case: DO-41
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Cathode indicated by polarity band
- Weight : 310mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBO
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
1.3
1.2
130
- 65 to +200
o
UNIT
W
V
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temerature .
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Version: G1606
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