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Visible Radiant Optical Sensors
Photo-diode Type BCS1210A1 Series
TDK Visible Radiant Optical Sensors are photo IC products that
contain a current amplifier circuit using a thin film silicon semicon-
ductor. The sensors use an amorphous silicon semiconductor on a
glass substrate as a photodiode
They are optimal as light sensors when performing automatic light
control for displays, etc.
FEATURES
• BCS1210A1HE/1210A1LE are ultra-thin type (thickness: 0.3
mm max.).
• They are highly sensitive to visible light, having a spectral
sensitivity close to that of the spectral luminous efficiency of the
human eye.
• The sensors have virtually no sensitivity in the infrared region,
meaning they do not require optical filters to block infrared light
(generally, photodiodes using crystal silicon semiconductors
require optical filters).
• The series consist of surface mount devices that can be applied
lead-free reflow soldering, having a 1210 size ultra-small
packaging.
• It is a product conforming to RoHS directive.
SHAPES AND DIMENSIONS
BCS1210A1HE/BCS1210A1LE
Photo detective
area
(0.55)
Vss terminal
V
DD
terminal
Conformity to RoHS Directive
APPLICATIONS
• Brightness control for LCD, EL and CRT
• Brightness control for keypads (e. g. Mobile phones)
• Switch for IC card or other thin set
• Exposure adjust for compact camera
• Sub exposure adjust for digital camera
BCS1210A1HD/BCS1210A1LD
Photo detective
area
(0.55)
Vss terminal
V
DD
terminal
(0.38)
(0.38)
(0.9)
1.2
0.3max.
(0.4)
(0.3)
(0.4)
1.2
(0.4)
(0.3)
(0.4)
0.6max.
Dimensions in mm
CIRCUIT DIAGRAM
V
DD
Photodiode
Current amplification
circuit
Vss
• Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific
bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications.
• All specifications are subject to change without notice.
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1.0
1.0
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ELECTRICAL CHARACTERISTICS
Item
Output current
[100Lux
∗1
V
DD
=3V]
(µA)
Output current
[1000Lux
∗1
V
DD
=3V]
(µA)
Dark current
[0Lux V
DD
=3V](nA)
Reverse bias voltage: VR
(V)
Spectral sensivity area
(nm)
Peak of sensivity
(nm)
Operating temperature range
(°C)
Storage temperature range
(°C)
Dimensions(mm)
min.
∗2
typ.
∗2
max.
∗2
min.
∗2
typ.
∗2
max.
∗2
BCS1210A1HE
18.0
24.0
30.0
180.0
240.0
300.0
10max.
5
350 to 750
580±20
–20 to +85
–40 to +85
1.2× 1.0× 0.3t
BCS1210A1LE
2.3
3.0
3.8
22.5
30.0
37.5
4max.
5
350 to 750
580±20
–20 to +85
–40 to +85
1.2× 1.0× 0.3t
BCS1210A1HD
18.0
24.0
30.0
180.0
240.0
300.0
10max.
5
350 to 750
580±20
–20 to +85
–40 to +85
1.2× 1.0× 0.6t
BCS1210A1LD
2.3
3.0
3.8
22.5
30.0
37.5
4max.
5
350 to 750
580±20
–20 to +85
–40 to +85
1.2× 1.0× 0.6t
• Measurement temperature: 25°C
∗1
Light source for measurement is white light fluorescent lamp.(Color temperature 4200K)
∗2
Standard value
TYPICAL ELECTRICAL CHARACTERISTICS
OUTPUT CURRENT CHARACTERISTICS
BCS1210LD/BCS1210LE
1.00E-3
BCS1210HD/BCS1210HE
1.00E-2
1.00E-4
1.00E-3
Output current(A)
1.00E-5
Output current(A)
Output current(V
DD
=3V)
Output current(V
DD
=2V)
Output current(V
DD
=1V)
1.00E-4
1.00E-6
1.00E-5
1.00E-7
1.00E-6
Output current(V
DD
=3V)
Output current(V
DD
=2V)
Output current(V
DD
=1V)
1.00E-8
1
10
100
1000
Illuminance(lx)
10000
100000
1.00E-7
1
10
100
1000
Illuminance(lx)
10000
100000
TEST CIRCUIT
Measurement temperature: 25°C
Light
Sensor
V
DD
=
1,2,3V
A
I-meter
• All specifications are subject to change without notice.
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OUTPUT VOLTAGE CHARACTERISTICS
BCS1210LD/BCS1210LE
10
BCS1210HD/BCS1210HE
10
1
1
Output Voltage(V)
0.1
Output Voltage(V)
1000Ω
10000Ω
100000Ω
0.1
0.01
0.01
0.001
0.001
100Ω
1000Ω
10000Ω
0.0001
1
10
100
1000
Illuminance(lx)
10000
100000
0.0001
1
10
100
Illuminance(lx)
1000
10000
TEST CIRCUIT
Measurement temperature: 25°C
Light
Sensor
Vout
R
L
V
DD
=
2.6V
SENSITIVITY WAVELENGH
1.2
1.0
Relative response
Sensor
0.8
0.6
LIGHT CURRENT RATION
(IL at CIE standard A Light)/(IL at Fluoresence light)
1.00E-2
1.00E-3
Output current(A)
1.00E-4
H Series
0.4
0.2
0.0
300
1.00E-5
L Series
Human eyes
(CIE standard)
400
500
600
700
800
1.00E-6
Wave length(nm)
1.00E-7
IL at Fluoresence light
IL at CIE standard A Light
1.00E-8
1
10
100
1000
Illuminance(lx)
10000
100000
• All specifications are subject to change without notice.
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TEMERATURE DEPENDENCE OF OUTPUT CURRENT
(V
DD
=3V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50
L Series
H Series
V
DD
=3V
F
L
=100lx
DIRECTIVITY
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–90
D type(A direction)
E type(A direction)
D type(B direction)
E type(B direction)
Output current of relativity
Output current of relativity
–60
–30
0
Temperature(˚C)
50
100
0
Angle(deg.)
30
60
90
mm
1.2
1.0
mm
+
A
dir
ec
tio
n
–
+
B
dir
ec
t
–
ion
Active area
LIGHT RESPONSE CHARACTERISTICS
BCS1210LD/BCS1210LE
100000
BCS1210HD/BCS1210HE
100000
10000
10000
Switching time(
µs
)
1000
Switching time(
µs
)
L tr
L tf
L td
L ts
1000
100
100
10
10
H tr
H tf
H td
H ts
1
0.1
1
10
Load resistance R
L
(kΩ)
100
1
0.1
1
10
Load resistance R
L
(kΩ)
100
WAVEFORM
I
F
TEST CIRCUIT
Light(10Lux)
Sensor
V
DD
=
3V
1.5V
Vout
GND
td
90%
Vout
R
L
10%
tr
ts
tf
• All specifications are subject to change without notice.
001-01 / 20080609 / eb51_bcs1210a1.fm
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