NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Small SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88)
small SMD plastic package.
1
Top view
Marking code:
74.
BAT74S
PINNING
PIN
1
2
3
4
5
6
anode 1
not connected
cathode 2
anode 2
not connected
cathode 1
DESCRIPTION
6
5
4
handbook, halfpage
6
5
4
1
2
3
MSA370
2
3
MDB277
Fig.1
Simplified outline (SOT363; SC-88) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
V
R
V
R
I
F
I
FRM
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
2003 Apr 11
2
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
T
amb
≤
25
°C;
see Fig.2
−
−65
−
−65
−
series connection
t
p
≤
1 s;
δ ≤
0.5
−
−
−
−
−
−
30
200
300
600
240
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Double diode operation
continuous reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
30
60
110
(1)
200
V
V
mA
mA
NXP Semiconductors
Product data sheet
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; note 1; see Fig.4
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA
f = 1 MHz; V
R
= 1 V; see Fig.5
240
320
400
500
800
2
5
PARAMETER
CONDITIONS
BAT74S
MAX.
UNIT
mV
mV
mV
mV
mV
μA
ns
C
d
Note
diode capacitance
10
pF
1. Pulsed test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT363 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
416
UNIT
K/W
2003 Apr 11
3
NXP Semiconductors
Product data sheet
Schottky barrier double diode
GRAPHICAL DATA
BAT74S
300
Ptot
(mW)
200
MBL889
MSA892
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
100
1
(1)
(2)
(3)
0
0
75
Tamb (°C)
150
10
1
0
0.4
0.8
VF (V)
1.2
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Fig.2 Power derating curve.
Forward current as a function of forward
voltage; typical values.
10
3
IR
(μA)
10
2
(2)
(1)
MSA893
handbook, halfpage
15
MSA891
Cd
(pF)
10
10
5
1
(3)
10
1
0
10
20
VR (V)
30
0
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 11
4
MCU
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