Agilent HMMC-5021
(2–22 GHz)
HMMC-5022
(2–22 GHz)
and
HMMC-5026
(2–26.5 GHz)
2–26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Data Sheet
Features
•Wide-Frequency Range:
2–26.5 GHz
•High Gain: 9.5 dB
•Gain Flatness:
±
0.75 dB
•Return Loss:
Input:
−14
dB, Output:
−13
dB
•Low-Frequency Operation
Capability: < 2 GHz
•Gain Control:
35 dB Dynamic Range
•Moderate Power:
20 GHz: P
−1dB
,18 dBm, P
sat
: 20dBm
26.5 GHz: P
−1dB
,15 dBm, P
sat
:17dBm
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980
×
770
µm (117.3 ×
30.3 mils)
±10 µm
(±0.4 mils)
127
±
15
µm
(5.0
±
0.6 mils)
75
×
75
µm
(2.95
×
2.95 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Max. Assembly Temp.
(for 60 seconds maximum)
−55
−65
+165
300
−5
−9
−2.5
−7
2.0
23
+150
Min.
Max.
8.0
250
0
+5
+3.5
Units
volts
mA
volts
mA
volts
mA
watts
dBm
°C
°C
°C
°C
Description
The HMMC-5021/22/26 is a
broadband GaAs MMIC Travel-
ing Wave Amplifier designed for
high gain and moderate output
power over the full 2 to 26.5 GHz
frequency range. Seven MES-
FET cascode stages provide a
flat gain response, making the
HMMC-5021/22/26 an ideal
wideband gain block. Optical li-
thography is used to produce
gate lengths of
≈
0.4
µm.The
HMMC-5021/22/26 incorpo-
rates advanced MBE technolo-
gy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protec-
tion.
V
DD
I
DD
V
G1
I
G1
V
G2[2]
I
G2
P
DC
P
in
T
ch
T
case
T
stg
T
max
Notes:
[1]
Operation in excess of any one of these conditions may result in permanent damage to this
device. T
A
= 25°C except for T
ch
, T
stg
, and T
max
.
[2]
Minimum voltage on V
G2
must not violate the following: V
G2
(min) > V
DD
−9
volts.
1
DC Specifications/Physical Properties
[1]
(
Applies to all part numbers)
Symbol
I
DSS
Vp
V
G2
I
DSOFF
(V
G1
)
I
DSOFF
(V
G2
)
θ
ch-bs
Notes:
[1]
Measured
Parameters/Conditions
Saturated Drain Current
(V
DD
= 7.0V, V
G1
= 0.0V, V
G2
= open circuit)
First Gate Pinch-Off Voltage
(V
DD
= 7.0V, I
DD
= 16 mA, V
G2
= open circuit)
Second Gate Self-Bias Voltage
(V
DD
= 7.0V, V
G1
= 0.0V)
First Gate Pinch-Off Current
(V
DD
= 7.0V, V
G1
= -3.5V, V
G2
= open circuit)
Second Gate Pinch-Off Current
(V
DD
= 5.0V, V
G1
= 0.0V, V
G2
= -3.5V)
Thermal Resistance
(Tbackside = 25°C)
in wafer form with T
chuck
= 25°C. (Except
θ
ch-bs
.)
Min.
115
−3.5
Typ.
180
−1.5
2.1
4
8
36
Max.
250
−.5
Units
mA
volts
volts
mA
mA
°C/W
RF Specifications
(V
DD
= 7.0V, I
DD
(Q)
= 150mA, Z
in
= Z
o
= 50Ω)
[1]
2.0–22.0 GHz
Symbol
BW
Parameters/Conditions
Guaranteed Bandwidth
[2]
Small Signal Gain
Small Signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Minimum Reverse Isolation
Output Power at 1dB Gain
Compression
Saturated Output Power
Max. Second Harm. (2 <ƒ
o
<20),
[P
o
(ƒ
o
) = 17 dBm or P
-1dB
,
whichever is less]
Max. Third Harm. (2 <ƒ
o
<20),
[P
o
(ƒ
o
) = 17 dBm or P
-1dB
,
whichever is less]
Noise Figure
HMMC-5021
Typ.
2–22
10
±0.5
16
13
32
18
20
−25
10
10
20
15
17
2
8.0
10
±0.5
16
13
32
18
20
−25
−20
HMMC-5022
Min.
Typ.
Max.
22
12
±1.0
10
10
20
12
14
Min.
2
7.5
9.5
±0.75
14
13
30
15
17
−25
−20
2.0–26.5 GHz
HMMC-5026
Typ.
Max.
26.5
12
±1.0
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBc
S
21
S
21
RL
in(min)
RL
out(min)
Isolation
P
-1dB
P
sat
H
2(max)
H
3(max)
NF
Notes:
−34
8
−34
8
−20
−34
10
−20
dBc
dB
[1]
Small-signal data measured in wafer form with T
[2]
Performance
Microcircuit Package @ T
A
= 25°C.
may be extended to lower frequencies through the use of appropriate off–chip circuitry. Upper
−3
dB corner frequency ~ 29.5 GHz.
chuck
= 25°C. Large–signal data measured on individual devices mounted in an 83040 Series Modular
2
Applications
The HMMC-5021/22/26 series of
traveling wave amplifiers are
designed for use as general pur-
pose wideband gain blocks in
communication systems and mi-
crowave instrumentation. They
are ideally suited for broadband
applications requiring a flat
gain response and excellent
port matches over a 2 to 26.5
GHz frequency range. Dynamic
gain control and low–frequency
extension capabilities are de-
signed into these devices.
operation. See Figure 3 for as-
sembly information.
The HMMC-5021/22/26 is a DC
coupled amplifier. External cou-
pling capacitors are needed on
RF
IN
and RF
OUT
ports. The
drain bias pad is connected to
RF and must be decoupled to
the lowest operating frequency.
The auxiliary gate and drain
contacts are provided when per-
formance below 1 GHz is re-
quired. Connect external
capacitors to ground to main-
tain input and output VSWR at
low frequencies (see Additional
References). Do not apply bias
to these pads.
The second gate (V
G2
) can be
used to obtain 35 dB (typical)
dynamic gain control. For nor-
mal operation, no external bias
is required on this contact and
its self–bias voltage is
≈
+2.1 v.
Applying an external bias be-
tween its open–circuit voltage
and
−2.5
volts will adjust the
gain while maintaining a good
input/output port match.
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
DD
) and a single negative gate
supply (V
G1
). The recommended
bias conditions for the HMMC-
5021/22/26 are V
DD
=7.0V, I
DD
=
150mA for best overall perfor-
mance. To achieve this drain
current level, V
G1
is typically bi-
ased between
−0.2V
and
−0.5V.
No other bias supplies or con-
nections to the device are re-
quired for 2 to 26.5 GHz
Additional References:
AN# 31, "2–26.5 GHz Variable
Gain Amplifier Using HMMC-
5021/22/26 and HMMC-1002
GaAs MMIC," AN# 34, "HMMC-
5021/22/26/27 TWA Environ-
mental Data," AN# 41, "HMMC-
5021/22/26 S–Parameters Per-
formance as a Function of Bond-
ing Configuration," and AN# 56,
"GaAs MMIC TWA Users Guide."
Drain Bias
(V
DD
)
Seven Identical Stages
Aux. Drain
RF Output
124
RF Input
124
Second Gate
Bias (V
G2
)
Temp
Diode
Sense
Single Stage Shown
Temp
Diode
Force
First Gate
Bias (V
G1
)
Aux. Gate
Notes:
FET gate periphery in microns.
Figure 1.
Schematic
3
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