NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
BYV40E series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
≤
0.7 V
I
O(AV)
= 1.5 A
I
RRM
= 0.1 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV40E series is supplied in
the SOT223 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV40E
T
sp
≤
120˚C
-
-
-
-
-
-
-
MIN.
-150
150
150
150
1.5
1.5
6
6.6
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
I
RRM
I
RSM
T
stg
T
j
square wave;
δ
= 0.5;
T
sp
≤
132˚C
t = 25
µs; δ
= 0.5;
T
sp
≤
132 ˚C
t
p
= 10 ms
t
p
= 8.3 ms
sinusoidal; T
j
= 150˚C prior
to surge; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
-
-
-65
-
0.1
0.1
150
150
A
A
˚C
˚C
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
BYV40E series
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
one or both diodes conducting
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
MIN.
-
-
-
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 0.5 A; T
j
= 150˚C
I
F
= 1.5 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 2 A; dI
F
/dt = 20 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.50
0.82
100
5
-
-
10
3
MAX.
0.7
1.0
300
10
11
25
20
-
UNIT
V
V
µA
µA
nC
ns
ns
V
September 1998
2
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
1
PF / W
Vo = 0.66 V
Rs = 0.08 Ohms
BYV40
Tsp(max) / C
135
0.8
0.5
D = 1.0
138
0.6
141
time
VF
V
VF
time
fr
0.2
0.4
0.1
I
t
p
D=
t
p
T
t
144
0.2
T
147
0
0
0.2
0.4
0.6
0.8
IF(AV) / A
1
1.2
150
1.4
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.66 V
Rs = 0.08 Ohms
R
0.7
0.6
0.5
BYV40
Tsp(max) / C
139.5
141
142.5
144
145.5
147
148.5
a = 1.57
1.9
2.2
2.8
4
D.U.T.
Voltage Pulse Source
0.4
0.3
Current
shunt
0.2
to ’scope
0.1
0
0
0.1
0.2
0.3
0.4
0.5
IF(AV) / A
0.6
0.7
150
0.8
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
3
Rev 1.300
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
trr / ns
1000
100
Qs / nC
100
IF = 2A
1A
IF=2A
10
IF=1A
10
1
1
10
dIF/dt (A/us)
100
1
1
10
dIF/dt(A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.9. Maximum Q
s
at T
j
= 25 ˚C; per diode
3
IF / A
Tj=25C
Tj=150C
100
Transient thermal impedance, Zth j-sp (K/W)
10
2
TYP
1
MAX
0.1
P
D
t
p
D=
1
t
p
T
t
1s
10s
0
0
0.5
VF / V
1.0
1.5
0.01
1us
T
10us
100us 1ms
10ms
pulse width, tp (s)
100ms
BYV40E
Fig.8. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Transient thermal impedance; per diode;
Z
th j-sp
= f(t
p
).
September 1998
4
Rev 1.300
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