MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC4DCM/D
TRIACS
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
•
Small Size Surface Mount DPAK Package
•
Passivated Die for Reliability and Uniformity
•
Blocking Voltage to 800 V
•
On–State Current Rating of 4.0 Amperes RMS at 108°C
•
High Immunity to dv/dt — 500 V/
m
s at 125°C
•
High Immunity to di/dt — 6.0 A/ms at 125°C
G
ORDERING INFORMATION
•
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DCNT4
•
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DCN–1
MT2
MAC4DCM
MAC4DCN
Motorola Preferred Devices
TRIACS
4.0 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
MT1
MT2
G
CASE 369A–13
STYLE 6
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 108°C)
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
m
sec, TC = 108°C)
Average Gate Power
(t = 8.3 msec, TC = 108°C)
Peak Gate Current (Pulse Width
≤
10
m
sec, TC = 108°C)
Peak Gate Voltage (Pulse Width
≤
10
m
sec, TC = 108°C)
Operating Junction Temperature Range
Storage Temperature Range
MAC4DCM
MAC4DCN
IT(RMS)
4.0
ITSM
40
I2t
PGM
0.5
PG(AV)
0.1
IGM
VGM
TJ
Tstg
0.5
5.0
–40 to 125
–40 to 150
Amps
Volts
°C
6.6
A2sec
Watts
Symbol
VDRM
600
800
Amps
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes (3)
Symbol
R
q
JC
R
q
JA
R
q
JA
Max
3.5
88
80
Unit
°C/W
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
©
Motorola, Inc. 1997
1
MAC4DCM MAC4DCN
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristics
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
Peak On–State Voltage (1)
(ITM =
±
6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
TJ = 125°C
Holding Current
(VD = 12 V, Gate Open, IT =
±
200 mA)
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
TJ = 25°C
TJ = 125°C
VTM
—
IGT
8.0
8.0
8.0
VGT
0.5
0.5
0.5
0.2
IH
6.0
IL
—
—
—
30
50
20
60
80
60
22
35
mA
0.8
0.8
0.8
0.4
1.3
1.3
1.3
—
mA
12
18
22
35
35
35
Volts
1.3
1.6
mA
Symbol
IDRM
—
—
—
—
0.01
2.0
Volts
Min
Typ
Max
Unit
mA
DYNAMIC CHARACTERISTICS
Characteristics
Rate of Change of Commutating Current (1)
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/
m
sec, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 5.0
m
F, LL = 20 mH, No Snubber)
See Figure 15
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
(1) Pulse test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
Symbol
di/dt(c)
6.0
8.4
—
Min
Typ
Max
Unit
A/ms
dv/dt
500
1700
—
V/
m
s
2
Motorola Thyristor Device Data
MAC4DCM MAC4DCN
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
125
6.0
180°
5.0
α
α
dc
120
a
= 30°
60°
90°
120°
90°
4.0
3.0
2.0
a
= CONDUCTION ANGLE
115
α
α
110
a
= CONDUCTION ANGLE
120°
180°
dc
3.5
4.0
a
= 30°
1.0
0
0
1.0
2.0
3.0
60°
105
0
0.5
1.0
1.5
2.0
2.5
3.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TYPICAL @ TJ = 25°C
10
MAXIMUM @ TJ = 125°C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
0.1
Z
q
JC(t) = R
q
JC(t)
S
r(t)
1.0
MAXIMUM @ TJ = 25°C
0.1
0
1.0
2.0
3.0
4.0
5.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 k
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
60
VGT, GATE TRIGGER VOLTAGE(VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
50
40
30
Q2
20
Q1
10
0
–50
1.2
1.0
0.8
0.6
0.4
0.2
0
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Q2
Q3
Q1
Q3
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Motorola Thyristor Device Data
3
MAC4DCM MAC4DCN
60
50
40
30
20
MT2 NEGATIVE
10
0
–50
MT2 POSITIVE
120
100
Q2
80
60
Q1
40
20
0
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Q3
IH , HOLDING CURRENT (mA)
Figure 7. Typical Holding Current versus
Junction Temperature
IL, LATCHING CURRENT (mA)
Figure 8. Typical Latching Current versus
Junction Temperature
10 K
TJ = 125°C
8.0 K
STATIC dv/dt (V/
m
s)
STATIC dv/dt (V/
m
s)
15 K
TJ = 125°C
VPK = 400 V
10 K
600 V
800 V
5.0 K
6.0 K
600 V
4.0 K
800 V
VPK = 400 V
2.0 K
0
100
1000
RGK, GATE–MT1 RESISTANCE (OHMS)
10 K
0
100
1000
RGK, GATE–MT1 RESISTANCE (OHMS)
10 K
Figure 9. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+)
Figure 10. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(–)
10 K
14 K
12 K
GATE OPEN
STATIC dv/dt (V/
m
s)
10 K
8.0 K
6.0 K
4.0 K
2.0 K
0
400
500
600
700
800
400
500
600
700
800
VPK, PEAK VOLTAGE (VOLTS)
VPK, PEAK VOLTAGE (VOLTS)
125°C
110°C
TJ = 100°C
GATE OPEN
8.0 K
STATIC dv/dt (V/
m
s)
TJ = 100°C
6.0 K
110°C
4.0 K
125°C
2.0 K
0
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(–)
4
Motorola Thyristor Device Data
MAC4DCM MAC4DCN
10 K
14 K
12 K
8.0 K
STATIC dv/dt (V/
m
s)
VPK = 400 V
6.0 K
600 V
4.0 K
800 V
2.0 K
2.0 K
0
100
105
110
115
120
125
TJ, JUNCTION TEMPERATURE (°C)
0
100
105
110
115
120
125
TJ, JUNCTION TEMPERATURE (°C)
GATE OPEN
STATIC dv/dt (V/
m
s)
10 K
8.0 K
6.0 K
800 V
4.0 K
600 V
VPK = 400 V
GATE OPEN
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(–)
100
VPK = 400 V
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
m
s)
TJ = 125°C
10
100°C
75°C
tw
VDRM
f=
1
2 tw
6f I
(di/dt)c = TM
1000
1.0
0
5.0
10
15
20
25
30
35
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
Motorola Thyristor Device Data
5
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