Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A
(MA7D52, MA7D52A)
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
15.0
±
0.5
9.9
±
0.3
3.0
±
0.5
4.6
±
0.2
2.9
±
0.2
I
Features
•
Low forward rise voltage V
F
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage
>
5.0 kV
•
Easy-to-mount, caused by its V cut lead end
φ
3.2
±
0.1
13.7
±
0.2
4.2
±
0.2
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
2.54
±
0.3
3 5.08
±
0.5
2.6
±
0.1
0.55
±
0.15
I
Absolute Maximum Ratings
T
a
=
25°C
1
2
Parameter
Repetitive peak
reverse voltage
Non repetitive peak
reverse voltage
MA3D752
MA3D752A
MA3D752
MA3D752A
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
45
40
45
20
120
−40
to
+125
−40
to
+125
Unit
V
V
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
A
A
°C
°C
Internal Connection
1
2
3
Note) * : Half sine-wave; 10 ms/cycle
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
MA3D752
MA3D752A
Forward voltage (DC)
Thermal resistance
V
F
R
th(j-c)
Symbol
I
R
Conditions
V
R
= 40 V, T
C
= 25°C
V
R
= 45 V, T
C
= 25°C
I
F
= 10 A, T
C
= 25°C
Direct current (between junction and case)
Min
Typ
Max
5
5
0.55
3
V
°C/W
Unit
mA
Note) Rated input/output frequency: 100 MHz
Note) The part number in the parenthesis shows conventional part number.
632
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•
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2001 MAR
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