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IRF7488PBF

Description
Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size156KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRF7488PBF Overview

Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

IRF7488PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLEAD FREE, SO-8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)96 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)6.3 A
Maximum drain-source on-resistance0.029 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95283
IRF7488PbF
HEXFET
®
Power MOSFET
Applications
l
l
High frequency DC-DC converters
Lead-Free
V
DSS
80V
R
DS(on)
max
29mW@V
GS
=10V
Q
g
38nC
Benefits
S
1
8
7
A
A
D
D
D
D
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S
S
G
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
„
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes

through
„
are on page 9
www.irf.com
1
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