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MA650

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet View All

MA650 Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN

Fast Recovery Diodes (FRD)
MA111
MA650
Silicon planer type (cathode common)
0.7±0.1
For switching
s
Features
q
q
Unit : mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Low forward voltage V
F
Fast reverse recovery time t
rr
16.7±0.3
q
High reverse voltage V
R
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1
1.3±0.2
0.5
-0.1
0.8±0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.5
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
*
T
j
T
stg
Rating
200
200
10
60
– 40 to +150
– 40 to +150
Unit
V
V
A
A
˚C
˚C
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
1
2
3
s
Internal Connection
1
2
3
s
Electrical Characteristics
(Ta= 25˚C)
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
Symbol
I
RRM1
I
RRM2
V
F
t
rr
*
R
th(j-c)
R
th(j-a)
Condition
V
RRM
= 200V, T
C
= 25˚C
V
RRM
= 200V, T
j
=150˚C
I
F
= 5A, T
C
= 25˚C
I
F
=1A, I
R
=1A
Flat direct current between junction and case
min
typ
max
100
6
1
100
3
63
Unit
µA
mA
V
ns
˚C/W
˚C/W
Note 1. Rated input/output frequency : 10MHz
2. * t
rr
measuring circuit
50Ω
D.U.T
50Ω
I
F
I
R
5.5Ω
t
rr
0.1
×
I
R
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