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MA4S713

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size46KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

MA4S713 Overview

Silicon epitaxial planar type

MA4S713 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-F4
Contacts4
Manufacturer packaging codeSMINI4-F1
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
frequency bandL BAND
JESD-30 codeR-PDSO-F4
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current1 µA
Reverse test voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
Schottky Barrier Diodes (SBD)
MA4S713
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I
Features
Small S-mini type 4-pin package
Two isolated elements contained in one package, allowing high-
density mounting
Flat lead type package, resulting in promotion of the actual mounting
ratio and solderability with a high-speed mounter
Optimum for low-voltage rectification because of its low forward rise
voltage (V
F
)
Optimum for high-frequency rectification because of its short reverse
recovery time (t
rr
)
2.0
±
0.1
1.3
±
0.1
Unit : mm
2.1
±
0.1
1.25
±
0.1
1
4
2
3
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak forward current
Peak forward
current
Forward current
(DC)
Single
Double
*
Single
Double
*
T
j
T
stg
I
F
Symbol
V
R
V
RM
I
FM
Rating
30
30
150
110
30
20
125
−55
to
+125
°C
°C
2
mA
1
Unit
V
V
mA
0.7
±
0.1
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M1N
Internal Connection
4
3
Junction temperature
Storage temperature
Note) * : Value per chip
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Conditions
Min
Typ
Max
1
0.4
1
0.3
±
0.05
Unit
µA
V
V
pF
ns
1.5
1
Detection efficiency
65
%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
1 mA
I
F
= 10 mA
I
R
=
10 mA
R
L
=
100
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
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