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3.0SMCJ60ATR-A

Description
Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size427KB,6 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

3.0SMCJ60ATR-A Overview

Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, SMC, 2 PIN

3.0SMCJ60ATR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage73.7 V
Minimum breakdown voltage66.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologyAVALANCHE
Terminal surfacePure Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
3.0SMCJ SERIES
TechniAl Data
Data Sheet N0001 Rev. B
Automotive Qualified
3.0SMCJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
Glass Passivated Die Construction
3000W Peak Pulse Power Dissipation
5.0V- 170V Standoff Voltage
Uni- and Bi-Directional Versions Available
Excellent Clamping Apability
Fast Response Time
Plastic Ase Material has UL Flammability
ClassifiAtion Rating 94V-O
“-A” is an AEC-Q101 qualified device
This is a Pb − Free Device
All SMC Parts are Traceable to the Wafer Lot
Additional testing An be offered upon request
SMC
Circuit Diagram
MechaniAl Data
Ase: SMC Low Profile Molded Plastic
Terminals: Solder Plated , Solderable per MIL-STD
750, Method 2026
Polarity: Athode Band or Athode Notch
Unipolar
Bipolar
Maximum Ratings and Thermal Characteristics
@T
A
=25°C unless otherwise specified
Parameter
Peak Pulse Power Dissipation on 10/1000us waveform
(NOTE 1, 2, Fig.1)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 2),(Note 3)
TypiAl Thermal Resistance Junction to Lead
TypiAl Thermal Resistance Junction to Ambient
Operating Junction and Storage Temperature Range
Notes:
Symbol
P
PPM
I
FSM
R
θJL
R
θJA
T
J
,T
STG
Value
3000
300
15
75
-55 to 150
Units
W
A
°C/W
°C/W
°C
1. Non-repetitive current pulse , per Fig. 3 and derated above T
l
= 25°C per Fig. 2.
2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4pulses per minute maximum.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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