Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E
(MA704WA, MA704WK)
Silicon epitaxial planar type
Unit: mm
For switching
For wave detection
s
Features
•
Two MA3X704A (MA704A) is contained in one package
•
Low forward voltage V
F
and good wave detection efficiency
η
•
Small temperature coefficient of forward characteristic
•
Small reverse current I
R
•
Mini type 3-pin package
1
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
(0.65)
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Single
Double
*
Forward current (DC)
Single
Double
*
Junction temperature
Storage temperature
Note) *: Value per chip
1
2
Symbol
V
R
I
FM
I
F
T
j
T
stg
Rating
30
150
110
30
20
125
−55
to
+125
Unit
V
mA
EIAJ: SC-59
Mini3-G1 Package
0 to 0.1
1.1
+0.3
–0.1
MA3X704D
1 Cathode
2 Cathode
3 Anode
MA3X704E
Anode
Anode
Cathode
mA
°C
°C
Marking Symbol
•
MA3X704D:
M2P
•
MA3X704E:
M2R
Internal Connection
3
3
s
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
η
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
Conditions
D
1
E
2
Min
Typ
Max
1
0.4
1.0
Unit
µA
V
1.5
1.0
65
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00074BED
0.4
±0.2
5˚
pF
ns
%
Publication date: January 2002
1
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
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•
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2001 MAR
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