PIN diodes
MA3X557
(MA557)
Silicon epitaxial planar type
Unit: mm
For UHF and SHF bands AGC
0.40
+0.10
–0.05
0.16
+0.10
–0.06
s
Features
•
Small diode capacitance C
D
•
Large variable range of forward dynamic resistance r
f
•
Mini type package, allowing downsizing of equipment and automatic
insertion through the taping package and magazine package
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Operating ambient temperature
*
Storage temperature
Symbol
V
R
V
RM
I
F
P
D
T
opr
T
stg
Rating
40
45
100
150
−25
to
+85
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Mini3-G1 Package
Marking Symbol: M30
Internal Connection
3
Note) *: Maximum ambient temperature during operation
1
0 to 0.1
2
s
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
*
Symbol
I
R
V
F
C
D
r
f1
r
f2
V
R
=
40 V
I
F
=
100 mA
V
R
=
15 V, f
=
1 MHz
I
F
=
10
µA,
f
=
100 MHz
I
F
=
10 mA, f
=
100MHz
1
1.05
0.3
2
6
10
Conditions
Min
Typ
Max
100
1.2
0.5
Unit
nA
V
pF
kΩ
Ω
Note) 1. Rated input/output frequency: 100 MHz
2. Each characteristic is a standard for individual diode
3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002
SKL00003BED
0.4
±0.2
5˚
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
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•
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Due to modification or other reasons, any information contained in this material, such as available
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2001 MAR
Embedded System
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