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MA3X028

Description
Silicon epitaxial planar type variable resistor
File Size60KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet View All

MA3X028 Overview

Silicon epitaxial planar type variable resistor

Varistors
MA3X028 Series
(MA28 Series)
Silicon epitaxial planar type
Unit: mm
For reduced voltage and temperature compensation
Features
Extremely small reverse current I
R
High reliability with planar structure
Wide forward voltage V
F
range
1
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
Parameter
Reverse voltage
Peak forward MA3X0280A/B
current
MA3X028WA/WB
MA3X028TA/TB
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
FM
Rating
6
150
100
70
Unit
V
mA
0 to 0.1
1.1
+0.3
–0.1
Absolute Maximum Ratings
T
a
= 25°C
(0.65)
EIAJ: SC-59
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
P
D
T
j
T
stg
150
125
−55
to
+125
mW
°C
°C
Marking Symbol
MA3X0280A
MA3X0280B
MA3X028WA
MA3X028WB
MA3X028TA
MA3X028TB
:
MD
:
ME
:
MF
:
MK
:
ML
:
MM
Electrical Characteristics
T
a
=
25°C
±
3°C
*1
Parameter
Forward voltage MA3X028WA/WB
MA3X028TA/TB
Forward voltage MA3X0280A
MA3X0280B
MA3X028WA
MA3X028WB
MA3X028TA
MA3X028TB
Reverse current
Temperature
MA3X0280A/B
coefficient of
MA3X028WA/B
*2
forward voltage
MA3X028TA/B
I
R
−∆V
F
/∆T
V
R
=
6 V
I
F
=
3 mA
2.0
4.6
6.5
I
F
=
3 mA
V
F2
I
F
=
1.5 mA
Symbol
V
F1
I
F
=
10
µA
Conditions
Min
0.77
1.15
0.56
0.59
1.18
1.26
1.76
1.88
0.61
0.64
1.28
1.36
1.92
2.04
1.0
µA
mV/°C
V
Typ
Max
Unit
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *1: The temperature must be controlled 25°C for V
F
measurement. V
F
value measured at other temprature must be adjusted
to V
F
(25°C).
*2: T
j
=
25°C to 150°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKB00003CED
0.4
±0.2
1
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