Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1
±
0.1
1.25
±
0.1
0.425
+
0.1
2.0
±
0.2
1.3
±
0.1
0.65 0.65
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Peak forward
current
Single
Double
*
Single
Double
*
T
j
T
stg
I
FM
Symbol
V
R
V
RM
I
F
Rating
30
30
30
20
150
110
125
−55
to
+125
°C
°C
mA
Unit
V
V
mA
0.9
±
0.1
EIAJ : SC-70
Flat S-Mini Type Package
(3-pin)
MA3J741D MA3J741E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode 1,2 Cathode 1,2
Junction temperature
Storage temperature
Note) * : Value per hcip
Marking Symbol
•
MA3J741D
: M2P
•
MA3J741E
: M2R
Internal Connection
1
3
2
2
1
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
Conditions
D
Min
Typ
Max
1
0.4
1
0.15
−
0.05
•
Two MA3J741s are contained in one package (S-mini type 3-pin)
•
Low forward rise voltage (V
F
) and satisfactory wave detection
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
R
1
3
2
+
0.1
0.3
−
0
I
Features
E
Unit
µA
V
V
pF
ns
1.5
1
Detection efficiency
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
Power technology
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