Schottky Barrier Diodes (SBD)
MA3J742
(MA742)
Silicon epitaxial planar type
Unit: mm
For switching
3
0.3
+0.1
–0
0.15
+0.1
–0.05
•
Two MA3X716 (MA716) is contained in one package (series
connection)
•
Low forward voltage V
F
, optimum for low voltage rectification
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
S-Mini type 3-pin package
1.25
±0.1
2.1
±0.1
I
Features
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5°
0.9
±0.1
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Single
Series
*
Peak forward current Single
Series
*
Junction temperature
Storage temperature
Note) *: Value per chip
T
j
T
stg
I
FM
Symbol
V
R
V
RM
I
F
Rating
30
30
30
20
150
110
125
−55
to
+125
°C
°C
mA
Unit
V
V
mA
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SMini3-F1 Package
Marking Symbol: M1U
Internal Connection
3
1
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
h
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
= 10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.5
1
65
Conditions
Min
Typ
Max
1
0.4
1
pF
ns
%
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00056AED
(0.15)
(0.425)
5°
Publication date: August 2001
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•
Any applications other than the standard applications intended.
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR
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