MA3J142D datasheet, PDF - EEWORLD Datasheet

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MA3J142D: DescriptionSilicon epitaxial planar type; CategoryDiscrete semiconductor diode; File Size44KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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MA3J142D Overview

Silicon epitaxial planar type

MA3J142D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
Parts packaging code	SC-79
package instruction	R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PDSO-F3
JESD-609 code	e6
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	500 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
Maximum reverse recovery time	0.01 µs
surface mount	YES
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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Switching Diodes

MA3J142D

Silicon epitaxial planar type

Unit : mm

For switching circuits

0.425

2.1

±

0.1

1.25

±

0.1

0.425

+

0.1

2.0

±

0.2

1.3

±

0.1

0.65 0.65

•

Small S-mini type package contained two elements, allowing

high-density mounting

1

3

2

I

Absolute Maximum Ratings

T

a

=

25°C

Reverse voltage (DC)

Peak reverse voltage

Forward current

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

*

Junction temperature

Storage temperature

Note) * : t = 1 s

Single

Double

Single

Double

Single

Double

T

j

T

stg

I

FSM

I

FM

V

R

V

RM

I

F

80

100

150

225

340

500

750

150

−55

to

+150

°C

1

3

2

mA

V

mA

0.9

±

0.1

0.15

−

0.05

+

0.1

Parameter

Symbol

Rating

Unit

1 : Cathode 1

2 : Cathode 2

3 : Anode 1

Anode 2

Flat S-Mini Type Package (3-pin)

Marking Symbol: MO

Internal Connection

I

Electrical Characteristics

T

a

=

25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Reverse voltage (DC)

Terminal capacitance

Reverse recovery time

*

Symbol

I

R

V

F

V

R

C

t

rr

V

R

=

75 V

I

F

=

100 mA

I

R

=

100

µA

V

R

=

0 V, f

=

1 MHz

I

F

=

10 mA, V

R

=

6 V

I

rr

=

0.1 · I

R

, R

L

=

100

Ω

80

15

10

Conditions

Min

Typ

Max

100

1.2

Unit

nA

V

pF

ns

Note) 1. Rated input/output frequency: 100 MHz

2. * : t

rr

measuring circuit

Bias Application Unit N-50BU

t

r

10%

Input Pulse

t

p

t

I

F

t

rr

t

I

rr

=

0.1 · I

R

I

F

=

10 mA

V

R

=

6 V

R

L

=

100

Ω

Output Pulse

A

V

R

Pulse Generator

(PG-10N)

R

s

=

50

Ω

W.F.Analyzer

(SAS-8130)

R

i

=

50

Ω

90%

t

p

=

2

µs

t

r

=

0.35 ns

δ =

0.05

0.3

−

0

I

Features

1

Recommended Resources

audio power oscillator

Car lock dimming circuit

A5347 smoke detection application circuit

AGC amplifier

Quick charger for outdoor use

Astable flash circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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