Band Switching Diodes
MA2C859
Silicon epitaxial planar type
Unit : mm
For band switching
φ
0.45 max.
•
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
•
Less voltage dependence of the terminal capacitance C
t
•
Low forward dynamic resistance r
f
•
Optimum for a band switching of a tuner
0.2 max.
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
−25
to
+85
−55
to
+100
Unit
V
mA
°C
°C
2
φ
1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
*1
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
Symbol
I
R
V
F
C
t
r
f* 2
r
f
*3
Conditions
V
R
= 33 V
I
F
= 100 mA
V
R
= 6 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
Min
Typ
Max
100
1.0
13 min.
2.2
±
0.3
1st Band
2nd Band
0.2 max.
13 min.
I
Features
COLORED BAND
INDICATES
CATHODE
1
Unit
nA
V
pF
Ω
Ω
0.8
0.5
0.77
1.2
0.65
0.98
Note) 1．
Rated input/output frequency: 100 MHz
2． 1 : Measurement in light shielded condition
*
*2 : r
f
measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm
*3 : r
f
measuring instrument: YHP 4191A Lead length 5mm
I
Cathode Indication
Type No.
Color
1st Band
2nd Band
MA2C859
Black
Blue
1
MA2C859
I
F
V
F
10
2
10
3
T
a
=
85°C
10
Band Switching Diodes
I
R
V
R
10
3
I
R
T
a
Forward current I
F
(mA)
Reverse current I
R
(pA)
50°C
1
Reverse current I
R
(pA)
10
2
10
2
V
R
=
33 V
20 V
10
25°C
10
10
−1
T
a
=
85°C
10
−2
50°C 25°C
−
20°C
1
1
10
−3
0
0.2
0.4
0.6
0.8
1.0
1.2
10
−1
0
10
20
30
40
50
10
−1
−40
0
40
80
120
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
r
f
f
10
16
I
F
=
2 mA
T
a
=
25°C
r
f
Tester: TDC-121A
8
14
12
10
8
6
4
2
0
r
f
f
3.2
r
f
I
f
Forward dynamic resistance r
f
(
Ω
)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
f = 100 MHz
T
a
= 25°C
r
f
Tester: TDC-121A
Forward dynamic resistance r
f
(
Ω
)
6
4
2
0
Forward dynamic resistance r
f
(
Ω
)
I
F
=
2 mA
T
a
=
25°C
r
f
Tester: YHP4191A
1
3
10
30
100
1
2
3
5
10
20 30 50
100
1
10
100
Frequency f (MHz)
Frequency f (MHz)
Forward current I
F
(mA)
r
f
I
F
3.2
2.0
f
=
1 000 MHz
T
a
=
25°C
r
f
Tester: YHP4191A
C
t
V
R
1 000
f
=
1 MHz
T
a
=
25°C
I
f(surge)
t
W
Forward dynamic resistance r
f
(
Ω
)
1.6
Forward surge current I
F(surge)
(A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
Terminal capacitance C
t
(pF)
100
1.2
10
0.8
1
0.4
0
0.3
1
3
10
30
100
0
10
20
30
40
50
0.1
0.03
0.1
0.3
1
3
10
30
Forward current I
F
(mA)
Reverse voltage V
R
(V)
Pulse width t
W
(ms)
2
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