Switching Diodes
MA2C165, MA2C166, MA2C167
Silicon epitaxial planar type
For switching circuits
I
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
COLORED BAND
INDICATES
CATHODE
φ
0.45 max.
1
Unit : mm
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
(DC)
MA2C165
MA2C166
MA2C167
Repetitive peak
reverse voltage
MA2C165
MA2C166
MA2C167
Average forward current
Repetitive peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
I
F(AV)
I
FRM
I
FSM
T
j
T
stg
V
RRM
Symbol
V
R
Rating
35
50
75
35
50
75
100
225
500
200
−55
to
+200
mA
mA
mA
°C
°C
V
2
0.2 max.
Unit
V
0.2 max.
φ
1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
MA2C165
Symbol
I
R
V
R
= 15 V
V
R
= 30 V
MA2C166
V
R
= 15 V
V
R
= 50 V
MA2C167
V
R
= 20 V
V
R
= 75 V
MA2C165
MA2C166
MA2C167
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
MA2C165
MA2C166/167
MA2C165
V
F
V
R
C
t
t
rr
V
R
= 35 V, T
a
= 150°C
V
R
= 50 V, T
a
= 150°C
V
R
= 75 V, T
a
= 150°C
I
F
= 100 mA
I
R
= 5
µA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 1 V,
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
2.2
35
0.9
2
10
4
50
0.95
0.012
Conditions
Min
Typ
Max
0.025
0.1
0.025
5
0.025
5
100
100
100
1.2
V
V
pF
ns
Unit
µA
Note) 1. Rated input/output frequency: 100 MHz (MA2C165), 250 MHz (MA2C167), 1 000 MHz (MA2C166)
2. * : t
rr
measuring circuit
I
Cathode Indication
Type No.
Color
MA2C165 MA2C166
White
Green
MA2C167
Violet
13 min.
2.2
±
0.3
13 min.
1
MA2C165, MA2C166, MA2C167
Switching Diodes
I
F
V
F
10
3
Bias Application Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
10
2
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
1 V
R
L
=
100
Ω
Forward current I
F
(mA)
10
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
T
a
=
150°C
75°C
25°C
10
−1
−
20°C
t
rr
measuring circuit
10
−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage V
F
(V)
I
R
T
a
10
2
10
2
I
R
T
a
MA2C165
MA2C166
MA2C167
1.0
V
R
=
75 V
50 V
20 V
0.8
V
F
T
a
10
V
R
=
35 V
10
Reverse current I
R
(
µA
)
Reverse current I
R
(
µA
)
Forward voltage V
F
(V)
15 V
I
F
=
20 mA
0.6
10 mA
0.4
1 mA
1
1
10
−1
10
−1
10
−2
10
−2
0.2
0.1 mA
0.01 mA
10
−3
10
−3
0
40
80
120
160
200
0
40
80
120
160
200
0
−40
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Ambient temperature T
a
(
°C
)
Ambient temperature T
a
(
°C
)
I
R
V
R
10
2
MA2C165
T
a
=
150°C
10
10
10
2
MA2C166
MA2C167
I
R
V
R
2.0
T
a
=
150°C
C
t
V
R
f
=
1 MHz
T
a
=
25°C
Terminal capacitance C
t
(pF)
1.6
Reverse current I
R
(
µA
)
Reverse current I
R
(
µA
)
100°C
1
100°C
1
1.2
MA2C165
MA2C166, MA2C167
10
−1
10
−1
25°C
10
−2
0.8
10
−2
25°C
0.4
10
−3
10
−3
0
10
20
30
40
0
0
20
40
60
80
0
4
8
12
16
20
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
2
Embedded System
京公网安备 11010802033920号
EEWORLD
