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MA2B171

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA2B171 Overview

Silicon epitaxial planar type

MA2B171 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeDO-35
package instructionO-XALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH SPEED SWITCH
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.2 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.02 µs
surface mountNO
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
Switching Diodes
MA2B170, MA2B171
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
I
Features
Large forward current I
F(AV)
High switching speed
Small terminal capacitance, C
t
COLORED BAND
INDICATES
CATHODE
φ
0.56 max.
1
24 min.
1st Band
2nd Band
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
(DC)
Repetitive peak
reverse voltage
MA2B170
MA2B171
MA2B170
MA2B171
I
F(AV)
I
FRM
I
FSM
T
j
T
stg
V
RRM
Symbol
V
R
Rating
40
80
40
80
200
600
1
200
−55
to
+200
mA
mA
A
°C
°C
V
2
φ
1.95 max.
Unit
V
24 min.
Average forward current
Repetitive peak forward current
Non-repetitive peak
forward surge
current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
1 : Cathode
2 : Anode
JEDEC : DO-35
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
MA2B170
MA2B171
MA2B170
MA2B171
MA2B170
MA2B171
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
V
F
C
t
t
rr
I
R
I
R2
V
R
= 35 V
V
R
= 75 V
V
R
= 35 V, T
a
= 150°C
V
R
= 75 V, T
a
= 150°C
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 1 V
I
rr
= 0.1 · I
R
, R
L
= 100
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
1 V
R
L
=
100
Output Pulse
Symbol
I
R1
V
R
= 15 V
Conditions
Min
Typ
Max
50
4.5 max.
Unit
nA
500
500
100
100
1.1
4
20
nA
µA
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
I
Cathode Indication
Type No.
Color
1st Band
2nd Band
MA2B170 MA2B171
Violet
White
Violet
Green
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1

MA2B171 Related Products

MA2B171 MA170 MA2B170
Description Silicon epitaxial planar type Silicon epitaxial planar type Silicon epitaxial planar type
Is it Rohs certified? conform to conform to conform to
Maker Panasonic Panasonic Panasonic
Parts packaging code DO-35 DO-35 DO-35
package instruction O-XALF-W2 O-XALF-W2 O-XALF-W2
Contacts 2 2 2
Reach Compliance Code unknow unknow unknown
ECCN code EAR99 EAR99 EAR99
Other features HIGH SPEED SWITCH HIGH SPEED SWITCH HIGH SPEED SWITCH
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-35 DO-35 DO-35
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 40 V 40 V
Maximum reverse recovery time 0.02 µs 0.02 µs 0.02 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature 10 NOT SPECIFIED 10
Maximum non-repetitive peak forward current 1 A - 1 A

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