DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC807
PNP general purpose transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 08
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
1
BC807
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
MARKING
2
TYPE NUMBER
BC807
BC807-16
BC807-25
BC807-40
Note
MARKING CODE
5D∗
5A∗
5B∗
5C∗
(1)
Top view
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
=
−10
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−50
−45
−5
−500
−1
−200
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC807
BC807-16
BC807-25
BC807-40
h
FE
V
CEsat
V
BE
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
DC current gain
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−500
mA; V
CE
=
−1
V; note 1
I
C
=
−500
mA; V
CE
=
−1
V;
notes 1 and 2
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
collector-emitter saturation voltage I
C
=
−500
mA; I
B
=
−50
mA; note 1
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−100
mA; V
CE
=
−1
V; note 1
see Figs 2, 3 and 4
MIN.
−
−
−
100
100
160
250
40
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
9
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
BC807
UNIT
K/W
MAX. UNIT
−100
−5
−100
600
250
400
600
−
−700
−1.2
−
−
mV
V
pF
MHz
nA
µA
nA
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 80
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807
handbook, full pagewidth
250
MBH717
hFE
200
VCE =
−1
V
150
100
50
0
−10
−1
BC807-16.
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
500
MBH718
hFE
400
VCE =
−1
V
300
200
100
0
−10
−1
BC807-25.
−1
−10
−10
2
IC (mA)
−10
3
Fig.3 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC807
handbook, full pagewidth
500
MBH719
hFE
400
VCE =
−1
V
300
200
100
0
−10
−1
BC807-40.
−1
−10
−10
2
IC (mA)
−10
3
Fig.4 DC current gain; typical values.
1999 Apr 08
5
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