MR16R1624EG0-CT9 datasheet, PDF

MR16R1624EG0-CT9: DescriptionKey Timing Parameters; Categorystorage storage; File Size443KB，16 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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MR16R1624EG0-CT9 Overview

Key Timing Parameters

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	DMA
package instruction	DIMM, DIMM184,40
Contacts	184
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	32 ns
Other features	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	1066 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	1073741824 bi
Memory IC Type	RAMBUS DRAM MODULE
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
organize	64MX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184,40
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL
Base Number Matches	1

MR16R1624(8/G)EG0

MR18R1624(8/G)EG0

Change History

Version 0.1 (December 2003) -

Preliminary

* First copy.

* Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM



Module Datasheet

Version 1.0 (May 2004)

* Eliminate "Preliminary"

Page 0

Version 1.0 May 2004

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