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AT49F010-90TJ

Description
Flash, 128KX8, 90ns, PDSO32, PLASTIC, MO-142BD, TSOP-32
Categorystorage    storage   
File Size366KB,12 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT49F010-90TJ Overview

Flash, 128KX8, 90ns, PDSO32, PLASTIC, MO-142BD, TSOP-32

AT49F010-90TJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeTSOP1
package instructionPLASTIC, MO-142BD, TSOP-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time90 ns
Other featuresHARDWARE DATA PROTECTION; BYTE PROGRAMMABLE
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length18.4 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeNOR TYPE
width8 mm
Base Number Matches1
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 10 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F010/HF010 are 5-volt only in-system programmable and erasable Flash
Memories. Their 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer
access times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100
µA.
(continued)
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT49F010
AT49HF010
Not Recommended
for New Design
Contact
Atmel to discuss
the latest design in trends
and options
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
DIP Top View
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
A12
A15
A16
NC
VCC
WE
NC
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0852B–10/98
1
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