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MMBF5459_NL

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size124KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MMBF5459_NL Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

MMBF5459_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)3 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
G
S
G
S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
D
NOTE: Source & Drain
are interchangeable
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5457-5459
625
5.0
125
357
Max
*MMBF5457-5459
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation

MMBF5459_NL Related Products

MMBF5459_NL 2N5457_D27Z 2N5457_D74Z MMBF5457_NL
Description Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code SOT-23 TO-92 TO-92 SOT-23
package instruction SOT-23, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SOT-23, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code not_compliant compli compli not_compliant
Configuration SINGLE SINGLE SINGLE SINGLE
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 3 pF 3 pF 3 pF 3 pF
JESD-30 code R-PDSO-G3 O-PBCY-T3 O-PBCY-T3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND ROUND RECTANGULAR
Package form SMALL OUTLINE CYLINDRICAL CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT APPLICABLE NOT APPLICABLE 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.225 W 0.31 W 0.31 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location DUAL BOTTOM BOTTOM DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -
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