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5082-0180

Description
Step Recovery Diode, Silicon, HERMETIC SEALED, GLASS, 01A, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size15KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

5082-0180 Overview

Step Recovery Diode, Silicon, HERMETIC SEALED, GLASS, 01A, 2 PIN

5082-0180 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage50 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance4.45 pF
Diode component materialsSILICON
Diode typeSTEP RECOVERY DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.29 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
5082-0180
GLASS PACKAGE STEP RECOVERY DIODE
DESCRIPTION:
The
ASI 5082-0180
is a Silicon Step
Recovery Diode Designed for
Synthesiser and Sampler Applications
Requiring a High Performance to Cost
Ratio.
PACKAGE STYLE 01A
FEATURES INCLUDE:
Transition Time
250 pS
Typical
Hermetic Glass Package
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JC
50 mA
50 V
290 mW @ T
C
= 25 °C
-65 to +200 °C
-65 to +200 °C
0.6 °C /mW
ORDER CODE:
CHARACTERISTICS
SYMBOL
V
BR
C
J
τ
T
t
I
R
= 10
µA
V
R
= 10 V
I
F
= 10 mA
V
R
= 7.0 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
f = 1.0 MHz
4.45
100
225
UNITS
V
pF
nS
pS
I
R
= 6.0 mA
I
F
= 3.0 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without
REV.
1/1
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