Date: 13
th
March, 2014
Data Sheet Issue: 2
Thyristor/Diode Modules M
##
600
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC
2000
2200
600-20io1W
600-22io1W
MCD
600-20io1W
600-22io1W
MDC
600-20io1W
600-22io1W
MCA
600-20io1W
600-22io1W
MCK
600-20io1W
600-22io1W
MCDA
600-20io1W
600-22io1W
MDCA
600-20io1W
600-22io1W
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage
1)
Non-repetitive peak off-state voltage
1)
Repetitive peak reverse voltage
1)
Non-repetitive peak reverse voltage
1)
MAXIMUM
LIMITS
2000-2200
2000-2200
2000-2200
2100-2300
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
V
ISOL
T
vj op
T
stg
Notes:
1)
2)
3)
4)
5)
6)
MAXIMUM
LIMITS
710
600
348
1116
921
16.5
18.2
1.36×10
6
1.66×10
6
150
300
5
4
30
3500
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
V
°C
°C
Maximum average on-state current, T
water
= 17°C, 4l/min
2), 3)
Maximum average on-state current. T
water
= 40°C, 4l/min
2), 3)
Maximum average on-state current. T
water
= 85°C, 4l/min
2), 3)
Nominal RMS on-state current, T
water
= 17°C, 4l/min
2), 3)
D.C. on-state current, T
water
= 17°C, 4l/min
3)
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
4)
Peak non-repetitive surge t
p
= 10 ms, V
RM
£
10V
4)
I
2
t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
4)
I
2
t capacity for fusing t
p
= 10 ms, V
RM
£
10 V
3)
Critical rate of rise of on-state current (repetitive)
5)
Critical rate of rise of on-state current (non-repetitive)
5)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Isolation Voltage
6)
Operating temperature range
Storage temperature range
De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
Single phase; 50 Hz, 180° half-sinewave.
Current ratings do not include adjustments, which may be necessary due to heat being returned by cable connections.
Half-sinewave, 125°C T
vj
initial.
V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
£
0.5µs, T
C
= 125°C.
AC RMS voltage, 50 Hz, 1min test
Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2
Page 1 of 12
March, 2014
Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW
Thyristor Characteristics
PARAMETER
V
TM
V
TM
V
T0
r
T
(dv/dt)
cr
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state
voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. TEST CONDITIONS
1)
-
-
-
-
-
-
-
-
-
-
0.6
1.2
3000
1800
140
26
200
300
1.69
1.16
0.88
0.46
-
70
70
3.0
300
V
D
= 80% V
DRM
, linear ramp, Gate o/c
Rated V
DRM
Rated V
RRM
T
vj
= 25°C, V
D
= 10 V, I
T
= 3 A
I
TM
= 1800 A
I
TM
= 600 A
UNITS
V
V
V
mW
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
1000 T
vj
= 25°C
1.5
2.5
-
2400 I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 50 V
-
-
-
-
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 20
V/µs
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 200 V/µs
I
FG
= 2 A, t
r
= 0.5 µs, V
D
= 67%V
DRM
,
I
TM
= 2000 A, di/dt = 10 A/µs, T
vj
= 25°C
t
q
Turn-off time
-
µs
Diode Characteristics
PARAMETER
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
rm
t
rr
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
MIN.
-
-
-
-
-
-
-
-
TYP. MAX. TEST CONDITIONS
1)
-
-
-
-
2200
1800
145
25
1.11
0.72
0.143
50
-
2250 I
FM
= 1000 A, t
p
= 1ms, di/dt = 10 A/µs,
V
R
= 50 V
-
-
Rated V
RRM
I
FM
= 1800 A
UNITS
V
V
mW
mA
µC
µC
A
µs
Module Characteristics
PARAMETER
R
thJW
F
1
F
2
W
t
Thermal resistance, junction to water
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Notes:
1) Unless otherwise indicated T
vj
=125°C.
Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2
Page 2 of 12
March, 2014
MIN.
-
4.25
10.2
-
TYP. MAX. TEST CONDITIONS
1)
-
-
-
1.8
0.09
5.75
13.8
-
2)
UNITS
K/W
Nm
Nm
kg
Single Thyristor/Single Diode
Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW
2) Screws must be lubricated
Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2
Page 3 of 12
March, 2014
Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
V
DRM
V
DSM
V
RRM
V
2000
2200
V
RSM
V
2100
2300
V
D
V
R
DC V
1250
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2
Page 4 of 12
March, 2014
Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
I
AV
-
V
T
0
+
V
T
0
+
4
×
ff
×
r
T
×
W
AV
=
2
×
ff
2
×
r
T
2
2
W
AV
and:
D
T
=
R
th
D
T
=
T
j
max
-
T
K
Where V
T0
= 0.88 V, r
T
= 0.46 mW,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0976
0.0950
60°
0.0955
0.0933
90°
0.0942
0.0924
120°
0.0933
0.0917
180°
0.0920
0.0902
270°
0.0907
d.c.
0.09
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating V
T
/V
F
using ABCD Coefficients
The on-state/forward characteristics, I
T
vs. V
T
, on pages 6 & 11 are represented in two ways;
(i) the well established V
T0
and r
T
tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in terms of
I
T
given below:
V
T
=
A
+
B
×
ln
(
I
T
)
+
C
×
I
T
+
D
×
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
T
agree with the true device characteristic over a current range, which is
limited to that plotted.
Thyristor coefficients
25°C
A
B
C
D
2.296566505
-0.3387419
-6.25982×10
-5
0.04767141
Diode coefficients
25°C
A
B
C
D
0.578986196
0.1048225
1.61162×10
-4
-7.480625×10
-3
Page 5 of 12
125°C
0.617965877
0.01056009
2.13809×10
-4
0.01430982
125°C
-0.214099731
0.2916851
5.15459×10
-4
-0.04232154
March, 2014
Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2
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