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BAS385-GS08

Description
DIODE 0.2 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size167KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BAS385-GS08 Overview

DIODE 0.2 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode

BAS385-GS08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VISHAY
BAS385
Vishay Semiconductors
Small Signal Schottky Barrier Diode
Features
• Integrated protection ring against static discharge
• Very low forward voltage
Applications
Applications where a very low forward voltage
is required
9612315
Mechanical Data
Case:
MicroMELF Glass Case
Weight:
approx. 12 mg
Cathode Band Color:
Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAS385
Type differentiation
V
R
= 30 V
Ordering code
BAS385-GS18 or BAS385-GS08
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
V
RWM
= 25 V
t
p
= 10 ms
t
p
1 s
Test condition
Symbol
V
R
I
FSM
I
FRM
I
F
I
FAV
Value
30
5
300
200
200
Unit
V
A
mA
mA
mA
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
Symbol
R
thJA
T
j
T
stg
Value
320
125
- 65 to + 150
Unit
K/W
°C
°C
Document Number 85504
Rev. 1.8, 27-Apr-04
www.vishay.com
1

BAS385-GS08 Related Products

BAS385-GS08 BAS385-GS18
Description DIODE 0.2 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode DIODE 0.2 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Parts packaging code MELF MELF
package instruction O-LELF-R2 O-LELF-R2
Contacts 2 2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.24 V 0.24 V
JESD-30 code O-LELF-R2 O-LELF-R2
JESD-609 code e2 e2
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 5 A 5 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 125 °C 125 °C
Maximum output current 0.2 A 0.2 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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