Temperature ranges are as follows: A, B Versions: –40°C to +85°C; S Version: –55°C to +125°C.
2
See Terminology.
3
This sample rate is only achievable when tiling the part in external clocking mode.
4
Full-scale error match applies to positive full scale for the AD7890-2 and AD7890-4. It applies to both positive and negative full scale for the AD7890-10.
5
Sample tested @ 25°C to ensure compliance.
6
Analog inputs on AD7890-10 must be at 0 V to achieve correct power-down current.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
(T
A
= 25°C unless otherwise noted)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Model
AD7890AN-2
AD7890BN-2
AD7890AR-2
AD7890BR-2
AD7890SQ-2
AD7890AN-4
AD7890BN-4
AD7890AR-4
AD7890BR-4
AD7890SQ-4
AD7890AN-10
AD7890BN-10
AD7890AR-10
AD7890BR-10
AD7890SQ-10
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
Linearity
Error
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
Package
Option*
N-24
N-24
R-24
R-24
Q-24
N-24
N-24
R-24
R-24
Q-24
N-24
N-24
R-24
R-24
Q-24
*N
= Plastic DIP; Q = Cerdip; R = SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7890 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
–3–
AD7890
TIMING CHARACTERISTICS
Parameter
f
CLKIN3
t
CLK IN LO
t
CLK IN HI
tr
4
tf
4
t
CONVERT
t
CST
Self-Clocking Mode
t
1
t
25
t
3
t
4
t
55
t
6
t
76
t
8
t
9
t
10
t
11
t
12
External-Clocking Mode
t
13
t
145
t
15
t
16
t
175
t
18
t
196
t
19A6
t
20
t
21
t
22
t
23
1, 2
(V
DD
= 5 V
5%, AGND = DGND = 0 V, REF IN = 2.5 V, f
CLK IN
= 2.5 MHz external, MUX OUT
connected to SHA IN.)
Unit
kHz min
MHz max
ns min
ns min
ns max
ns max
µs
max
ns min
ns max
ns max
ns nom
ns nom
ns max
ns max
ns max
ns min
ns max
ns min
ns min
ns min
ns min
ns min
ns max
ns min
ns min
ns max
ns min
ns max
ns max
ns min
ns min
ns min
ns min
Conditions/Comments
Master Clock Frequency. For Specified Performance
Master Clock Input Low Time
Master Clock Input High Time
Digital Output Rise Time. Typically 10 ns
Digital Output Fall Time. Typically 10 ns
Conversion Time
CONVST
Pulsewidth
RFS
Low to SCLK Falling Edge
RFS
Low to Data Valid Delay
SCLK High Pulsewidth
SCLK Low Pulsewidth
SCLK Rising Edge to Data Valid Delay
SCLK Rising Edge to
RFS
Delay
Bus Relinquish Time after Rising Edge of SCLK
TFS
Low to SCLK Falling Edge
Data Valid to
TFS
Falling Edge Setup Time (A2 Address Bit)
Data Valid to SCLK Falling Edge Setup Time
Data Valid to SCLK Falling Edge Hold Time
TFS
to SCLK Falling Edge Hold Time
RFS
Low to SCLK Falling Edge Setup Time
RFS
Low to Data Valid Delay
SCLK High Pulsewidth
SCLK Low Pulsewidth
SCLK Rising Edge to Data Valid Delay
RFS
to SCLK Falling Edge Hold Time
Bus Relinquish Time after Rising Edge of
RFS
Bus Relinquish Time after Rising Edge of SCLK
TFS
Low to SCLK Falling Edge Setup Time
Data Valid to SCLK Falling Edge Setup Time
Data Valid to SCLK Falling Edge Hold Time
TFS
to SCLK Falling Edge Hold Time
Limit at T
MIN
, T
MAX
(A, B, S Versions)
100
2.5
0.3
×
t
CLK IN
0 3
×
t
CLK IN
25
25
5.9
100
t
CLK IN HI
+ 50
25
t
CLK IN HI
t
CLK IN LO
20
40
50
0
t
CLK IN
+ 50
0
20
10
20
20
40
50
50
35
20
50
90
20
10
15
40
NOTES
1
Sample tested at –25°C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2
See Figures 8 to 11.
3
The AD7890 is production tested with f
CLK IN
at 2.5 MHz. It is guaranteed by characterization to operate at 100 kHz.
4
Specified using 10% and 90% points on waveform of interest.
5
These numbers are measured with the load circuit of Figure 1 and defined as the time required for the output to cross 0.8 V or 2.4 V.
6
These numbers are derived from the measured time taken by the data output to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then
extrapolated back to remove effects of charging or discharging the 50 pF capacitor. This means that the times quoted in the tim ing characteristics are the true bus
relinquish times of the part and as such are independent of external bus loading capacitances.
1.6mA
TO OUTPUT
PIN
+2.1V
50pF
200 A
Figure 1. Load Circuit for Access Time and Bus Relinquish Time
LAN9118 transplantation problem: 1) When the KITL Enabled option is selected, the image is built. After the board is started, it can be pinged, but it stops at the moment of attaching the PB to the bo...
[i=s]This post was last edited by yuanlai2010 on 2014-9-1 22:42[/i] [align=center][b][font=华文楷体][size=22.0pt][color=#0000ff]System V IPC[/color] –[/size][/font][/b][b][font=华文楷体][size=22.0pt]Semaphore...
A program is usually debugged and runs normally on the simulator. Today, when I downloaded it to my PDA, a "Fatal Application Error" prompt dialog box appeared as soon as I ran it. I debugged it and f...
This is the first time I have come across the von Neumann structure of 430. It is also because of this that I have a deeper understanding of the von Neumann structure and the Harvard structure.As for ...
The member bVk in the pKey structure is defined as 'A' (and so on 'B' 'C', etc., to simulate the keyboard) Then use keybd_event(pKey->bVk, 0, KEYEVENTF_SILENT, 0); to write the file WriteLog(pKey->bVk...
If the ultimate form of a car is a silicon-based life form, then in
the field of
intelligent driving
, it has gradually taken on the appearance of a "veteran driver." In
the field of
the ...[Details]
Tesla and BYD, vying for dominance in the global electric vehicle market, are reportedly considering adopting Samsung's AMOLED (active-matrix organic light-emitting diode) technology for their next...[Details]
Is electromagnetic radiation from electric vehicles harmful to the human body? Recently, the issue of electromagnetic radiation from electric vehicles has garnered widespread attention. However, pu...[Details]
introduction
With the development of digital and network technologies, broadcasting technology has become increasingly diversified, with the most significant trend being the transition from an...[Details]
Multi-touch mobile phone
Multi-touch is a system that can respond to multiple touches on the screen at the same time. Multi-touch phones are divided into capacitive and resistive types. Capaci...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
With the rapid adoption of smart electric vehicles, automotive chips are evolving from auxiliary control units to the foundation of the entire vehicle's intelligence. Their applications extend from...[Details]
Electric vehicles are becoming increasingly popular, with increasingly longer ranges. There are two ways to charge electric vehicles: slow charging and fast charging. Which is the most suitable? Sl...[Details]
According to Nikkei, Japan has performed poorly in responding to China's power semiconductor challenges.
There are five major companies in Japan's power chip market: Mitsubishi Electric,...[Details]
A patent disclosed by Ford proposes replacing traditional segmented side curtain airbags with integrated full-width side curtain airbags that span the side of the vehicle and can be deployed simult...[Details]
Common methods for troubleshooting roller press bearing wear include repair welding, thermal spraying, brush plating, and scrapping and replacement. However, these methods are often subject to asse...[Details]
With the support and encouragement of national policies, some Internet car manufacturers have also joined the new energy vehicle manufacturing industry. From the perspective of new car manufacturer...[Details]
Consumer demand for premium listening experiences has driven rapid evolution in the wireless headphone market in recent years. Hybrid designs, which utilize two drivers per earbud to enhance sound ...[Details]
The composition of the water heater
The water heater itself is divided into the following parts:
1. Water tank.
This is where the water heater is filled with water and where the wate...[Details]
introduction
With the development of the information superhighway and the internet, broadcast television has become increasingly widespread worldwide. Television information has emerged in var...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
