Mixer Diode, Low Barrier, X Band, 200ohm Z(V) Max, 6dB Noise Figure, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Hewlett Packard Co. |
| package instruction | S-CDMW-F2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765 |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| frequency band | X BAND |
| maximum impedance | 200 Ω |
| minimum impedance | 150 Ω |
| JESD-30 code | S-CDMW-F2 |
| JESD-609 code | e0 |
| maximum noise index | 6 dB |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating frequency | 18 GHz |
| Minimum operating frequency | 1 GHz |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE |
| Package form | MICROWAVE |
| Pulse input maximum power | 0.125 W |
| Minimum pulse input power | 1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Schottky barrier type | LOW BARRIER |
| Base Number Matches | 1 |
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