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6A05GB0G

Description
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size245KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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6A05GB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon,

6A05GB0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current250 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
6.0 AMPS. Glass Passivated Rectifiers
R-6
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
6A05G - 6A100G
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
/.375", (9.5mm) lead lengths at 5 lbs, (2.3kg) tension
Weight: 1.65 grams
Ordering Information (example)
Part No.
6A05G
Package
R-6
Packing
700 / AMMO box
INNER
TAPE
52mm
Packing
code
A0
Green Compound
Packing code
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@6A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Thermal Resistance
Operating and Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
@ T
A
=25
@ T
A
=125℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
TJ, T
STG
6A
05G
50
35
50
6A
10G
100
70
100
6A
20G
200
140
200
6A
40G
400
280
400
6
250
6A
60G
600
420
600
6A
80G
800
560
800
6A
100G
1000
700
1000
Units
V
V
V
A
A
1.1
10
100
60
35
1.0
V
uA
uA
pF
O
Typical Junction Capacitance (Note 2)
C/W
O
- 65 to + 150
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:D12
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