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1N4800BCO

Description
Variable Capacitance Diode, 100pF C(T), 17V, Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size51KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

1N4800BCO Overview

Variable Capacitance Diode, 100pF C(T), 17V, Silicon, DIE-1

1N4800BCO Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionX-XUUC-N
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage17 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio1.8083
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeX-XUUC-N
JESD-609 codee0
Number of components1
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
minimum quality factor15
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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