FSS9230D,
FSS9230R
December 2001
4A, -200V, 1.60 Ohm, Rad Hard,
SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Fairchild Corporation
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Fairchild for any desired deviations
from the data sheet.
Features
• 4A, -200V, r
DS(ON)
= 1.60
Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSS9230D1
FSS9230D3
FSS9230R1
FSS9230R3
FSS9230R4
Symbol
D
G
Formerly available as type TA17737.
S
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSS9230D, FSS9230R Rev. B
FSS9230D, FSS9230R
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSS9230D, FSS9230R
-200
-200
4
3
12
±
20
50
20
0.40
12
4
12
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
µ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
-200
-
-2.0
-1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -100V,
I
D
= 4A
-
-
-
-
-
I
D
= 4A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
5.6
11
-6
840
180
35
-
-
MAX
-
-7.0
-6.0
-
25
250
100
200
-6.72
1.60
2.90
55
110
130
120
58
37
2.5
7.6
15
-
-
-
-
2.5
60
UNITS
V
V
V
V
µ
A
µ
A
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -160V,
V
GS
= 0V
V
GS
=
±
20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 4A
I
D
= 3A,
V
GS
= -12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
©2001 Fairchild Semiconductor Corporation
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -100V, I
D
= 4A,
R
L
= 25
Ω
, V
GS
= -12V,
R
GS
= 7.5
Ω
FSS9230D, FSS9230R Rev. B
FSS9230D, FSS9230R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 4A
I
SD
= 4A, dI
SD
/dt = 100A/
µ
s
MIN
-0.6
-
TYP
-
-
MAX
-1.8
250
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= -160V
V
GS
= -12V, I
D
= 4A
V
GS
= -12V, I
D
= 3A
MIN
-200
-2.0
-
-
-
-
MAX
-
-6.0
100
25
-6.72
1.60
UNITS
V
V
nA
µA
V
Ω
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
36
APPLIED
V
GS
BIAS
(V)
20
5
10
15
20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
-200
-200
-160
-100
-40
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
©2001 Fairchild Semiconductor Corporation
FSS9230D, FSS9230R Rev. B
FSS9230D, FSS9230R
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
-200
-160
V
DS
(V)
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
-120
-80
-40
TEMP = 25
o
C
0
0
5
10
V
GS
(V)
15
20
25
1E-7
-10
-30
-100
DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
100
T
C
= 25
o
C
5
I
D
, DRAIN CURRENT (A)
4
I
D
, DRAIN (A)
10
100µs
3
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
-1
10ms
100ms
2
1
0
-50
0
50
100
150
-10
-100
-500
T
C
, CASE TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
FSS9230D, FSS9230R Rev. B
FSS9230D, FSS9230R
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.5
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 3A
2.0
NORMALIZED r
DS(ON)
-12V
Q
G
1.5
1.0
Q
GS
V
G
Q
GD
0.5
0.0
-80
CHARGE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
10
NORMALIZED
THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
P
DM
0.1
t
1
t
2
10
0
10
1
0.001
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
©2001 Fairchild Semiconductor Corporation
FSS9230D, FSS9230R Rev. B
京公网安备 11010802033920号
EEWORLD
