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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> 5STF06D1825
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5STF06D1825

Description
Silicon Controlled Rectifier, 875A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size200KB，15 Pages
ManufacturerABB
Websitehttp://www.abb.com/
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5STF06D1825 Overview

Silicon Controlled Rectifier, 875A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element

5STF06D1825 Parametric

Parameter NameAttribute value
MakerABB
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum DC gate trigger current500 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current875 A
Off-state repetitive peak voltage1800 V
Repeated peak reverse voltage1800 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
Base Number Matches1

5STF06D1825 Preview

5STF 06D2020
5STF 06D2020
Old part no. TR 907F-560-20
Medium Frequency Thyristor
Properties
§
§
§
§
§
Amplifying gate
High operational capability
Optimized turn-on and turn-off parameters
High operating frequency
Applications
Power switching applications
Key Parameters
V
DRM
, V
RRM
= 2 000
I
TAV
= 557
I
TSM
= 8.0
V
TO
= 2.348
r
T
= 0.386
t
q
= 20.0
V
A
kA
V
mΩ
µs
Types
V
RRM
, V
DRM
5STF 06D2020..2025
5STF 06D1820..1825
2 000 V
1 800 V
Conditions:
T
j
= -40 ÷ 125 °C, half sine waveform,
f = 50 Hz, note 1
Mechanical Data
F
m
m
D
S
Mounting force
Weight
Surface
creepage
distance
Air strike
distance
10 ± 2 kN
0.26 kg
25 mm
D
a
14 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - TR/246/07 Jul-10
1 of 15
5STF 06D2020
Maximum Ratings
V
RRM
V
DRM
I
TRMS
I
TAVm
I
TSM
I
2
t
(di
T
/dt)
cr
Repetitive peak reverse
and off-state voltage
T
j
= -40
÷
125 °C, note 1
Maximum Limits
5STF 06D2020..2025
5STF 06D1820..1825
2 000
1 800
875
557
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
A
A
A
A
2
s
A/µs
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
8 000
8 550
320 000
303 000
800
Limiting load integral
half sine pulse, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= I
TAVm
, half sine waveform, f = 50 Hz,
V
D
= 2/3 V
DRM
, t
r
= 0.3 µs, I
GT
= 2 A
(dv
D
/dt)
cr
P
GAVm
I
FGM
V
FGM
V
RGM
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Critical rate of rise of off-state voltage
V
D
= 2/3 V
DRM
1 000
3
10
12
10
-40 ÷ 125
-40 ÷ 125
V/µs
W
A
V
V
°C
°C
Maximum average gate power losses
Peak gate current
Peak gate voltage
Reverse peak gate voltage
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
Note 1: De-rating factor of 0.13% V
RRM
or V
DRM
per °C is applicable for T
j
below 25 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/246/07 Jul-10
2 of 15
5STF 06D2020
Characteristics
min.
V
TM
V
T0
r
T
I
DM
I
RM
t
gd
Maximum peak on-state voltage
I
TM
= 1 500 A
Value
typ.
max.
2.930
2.348
0.386
70
70
2.0
Unit
V
V
mΩ
mA
mA
µs
Threshold voltage
Slope resistance
I
T1
= 880 A, I
T2
= 2 639 A
Peak off-state current
V
D
= V
DRM
Peak reverse current
V
R
= V
RRM
Delay time
T
j
= 25 °C, V
D
= 0.4 V
DRM
, I
TM
= I
TAVm
,
t
r
= 0.3 µs, I
GT
= 2 A
t
q1
Turn-off time
I
T
= 500 A, di
T
/dt = -50 A/µs,
V
R
= 100 V, V
D
= 2/3 V
DRM
,
dv
D
/dt = 50 V/µs
group of
t
q
5STF 06D2020
5STF 06D1820
5STF 06D2025
5STF 06D1825
20.0
µs
25.0
240
80
µC
A
mA
mA
4
3
2
1000
500
300
V
Q
rr
I
rrM
I
H
I
L
V
GT
Recovery charge
the same conditions as at t
q1
Reverse recovery current
the same conditions as at t
q1
Holding current
Latching current
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
250
150
1 500
1 000
0.25
I
GT
Gate trigger current
V
D
= 12V, I
T
= 4 A
mA
10
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/246/07 Jul-10
3 of 15
5STF 06D2020
Thermal Parameters
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
32.0
52.0
83.0
10.0
20.0
Unit
K/kW
R
thch
Thermal resistance case to heatsink
double side cooling
single side cooling
K/kW
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
τ
i
( s )
R
i
( K/kW )
35
Transient thermal impedance junction
to case Z
thjc
( K/kW )
30
25
20
15
10
5
0
0.001
1
0.4857
13.07
2
0.2162
8.03
3
0.0762
8.20
4
0.0043
2.57
5
0.0006
0.13
Z
thjc
=
∑
R
i
(1
−
exp(
−
t
/
τ
i
))
i
=
1
5
Conditions:
F
m
= 10 ± 2 kN, Double side cooled
Correction for periodic waveforms
180° sine:
add 2.3 K/kW
180° rectangular: add 3.1 K/kW
120° rectangular: add 5.2 K/kW
60° rectangular: add 8.7 K/kW
0.01
0.1
1
10
Square wave pulse duration t
d
( s )
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/246/07 Jul-10
4 of 15
5STF 06D2020
On-State Characteristics
I
T
( A )
5000
T
j
= 25 °C
125 °C
4000
3000
2000
1000
0
0
1
2
3
4
V
( V
5
)
T
Fig. 3 Maximum on-state characteristics
Gate Trigger Characteristics
V
G
( V )
V
G
( V )
6
DC
5
-40 °C
14
12
V
GTmax
50 µs
1 ms
I
GTmax
10
4
+25 °C
3
8
6
2
+125 °C
4
1
V
GTmin
10 ms
2
DC
0
0
I
GTmin
0.2
0.4
0.6
0.8
1
I
G
( A )
0
0
2
4
6
8
10
12
I
G
( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Maximum peak gate power loss
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/246/07 Jul-10
5 of 15
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5STF06D1825 Related Products

5STF06D1825 5STF06D2025
Description Silicon Controlled Rectifier, 875A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element Silicon Controlled Rectifier, 875A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element
Maker ABB ABB
package instruction DISK BUTTON, O-CXDB-X4 DISK BUTTON, O-CXDB-X4
Reach Compliance Code compliant compliant
Configuration SINGLE SINGLE
Maximum DC gate trigger current 500 mA 500 mA
JESD-30 code O-CXDB-X4 O-CXDB-X4
Number of components 1 1
Number of terminals 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum rms on-state current 875 A 875 A
Off-state repetitive peak voltage 1800 V 2000 V
Repeated peak reverse voltage 1800 V 2000 V
surface mount YES YES
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR
Base Number Matches 1 1

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