F3S90HVX2-4062 datasheet, PDF - EEWORLD Datasheet

F3S90HVX2-4062: DescriptionPower Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size105KB，2 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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F3S90HVX2-4062 Overview

Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	SHINDENGEN
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	4.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	230 ns
Maximum opening time (tons)	70 ns
Base Number Matches	1

	F3S90HVX2-4062	F3S90HVX2-4072
Description	Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	SHINDENGEN	SHINDENGEN
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown
Other features	AVALANCHE RATED	AVALANCHE RATED
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	900 V	900 V
Maximum drain current (ID)	3 A	3 A
Maximum drain-source on-resistance	4.7 Ω	4.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	50 W	50 W
Maximum pulsed drain current (IDM)	6 A	6 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	230 ns	230 ns
Maximum opening time (tons)	70 ns	70 ns
Base Number Matches	1	1

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