ISSI
TARGET SPECIFICATION
IS62Ux12816 Series
128K x 16 LOW VOLTAGE, LOW POWER
CMOS STATIC RAM
FEATURES
• Voltage range options
-- 1.6V to 2.0V: IS62UT12816
-- 1.8V to 2.2V: IS62US12816
-- 2.3V to 2.7V: IS62UR12816
-- 2.7V to 3.3V: IS62UP12816
• Battery backup (SL/LL version)
-- 1.0V (min.) data retention
• Access times: 55, 70, and 100 ns
• Fully static operation and tri-state outputs
• Industrial temperature available
• Available in 48-ball mini BGA and
44-pin sTSOP (Type II)
®
ADVANCE INFORMATION
APRIL 1999
DESCRIPTION
The
ISSI
IS62Ux12816 series is a low voltage, 131,072
words by 16 bits, CMOS SRAM. It is fabricated using
ISSI
's
low voltage, six transistor (6T), CMOS technology. The
series is targeted to satisfy the demands of the state-of-
the-art technologies such as cell phones and pagers.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS62Ux12816 series is packaged in the 48-ball mini
BGA and the 44-pin sTSOP (Type II).
PRODUCT SERIES OVERVIEW
Part No.
IS62UP12816
IS62UP12816
(1)
IS62UR12816
IS62UR12816
(1)
IS62US12816
IS62US12816
(1)
IS62UT12816
IS62UT12816
(1)
Voltage (V)
3.0,
±0.3
3.0,
±0.3
2.5,
±0.2
2.5,
±0.2
2.0,
±0.2
2.0,
±0.2
1.8,
±0.2
1.8,
±0.2
Speeds (ns)
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
Standby Current (
µ
A)
Active I
CC
(mA)
LL
SL
25 @ 70 ns
25 @ 70 ns
15 @ 70 ns
15 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
2
Temperature (
°
C)
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
Note:
1. Current value is max.
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
2231 Lawson Lane • Santa Clara, CA 95054-3311 • 1-800-379-4774 • Fax: (408) 588-0806
e-mail: sales@issiusa.com •
www.issiusa.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION
SR065-0T
05/01/99
1
TARGET SPECIFICATION
IS62Ux12816 SERIES
TRUTH TABLE
I/O PIN
Mode
Not Selected
Output Disabled
Read
ISSI
CE
H
X
L
L
L
L
L
L
L
L
®
WE
X
X
H
X
H
H
H
L
L
L
OE
X
X
H
X
L
L
L
X
X
X
LB
X
H
X
H
L
H
L
L
H
L
UB
X
H
X
H
H
L
L
H
L
L
I/O0-I/O7
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Vcc Current
I
SB
, I
SB
1
I
CC
, I
CC
1
I
CC
, I
CC
1
Write
I
CC
, I
CC
1
Notes:
1. H = V
IH
, L = V
IL
, X = Don't Care.
2.
UB
,
LB
(Upper, Lower Byte enable).
These active LOW inputs allow individual bytes to be written or read.
When
LB
is LOW, data is written or read to the lower byte, I/O0-I/O7.
When
UB
is LOW, data is written or read to the upper byte, I/O8-I/O15.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
P
T
Iout
Parameter
Power Supply Voltage Related to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias
Com.
Ind.
Power Dissipation
DC Output Current
Value
–0.5 to +4.0
–0.5 to Vcc + 0.5
–65 to +150
–10 to +85
–45 to +90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION
SR065-0T
05/01/99
Electronics Design Contest
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