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IRLU9343-701PBF

Description
Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size337KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

IRLU9343-701PBF Overview

Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3

IRLU9343-701PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
PD - 95386A
DIGITAL AUDIO MOSFET
Features
Advanced Process Technology
l
Key Parameters Optimized for Class-D Audio
Amplifier Applications
l
Low R
DSON
for Improved Efficiency
l
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l
Low Q
rr
for Better THD and Lower EMI
l
175°C Operating Junction Temperature for
Ruggedness
l
Repetitive Avalanche Capability for Robustness and
Reliability
l
Multiple Package Options
l
Lead-Free
l
IRLR9343PbF
IRLU9343PbF
IRLU9343-701PbF
Key Parameters
-55
93
150
31
175
V
m
:
m
:
nC
°C
V
DS
R
DS(ON)
typ. @ V
GS
= -10V
R
DS(ON)
typ. @ V
GS
= -4.5V
Q
g
typ.
T
J
max
D
G
S
I-Pak
IRLU9343
I-Pak Leadform 701
IRLU9343-701
Refer to page 10 for package outline
D-Pak
IRLR9343
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Units
V
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
W
W/°C
°C
N
h
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
g
Parameter
Typ.
Max.
1.9
50
110
Units
°C/W
g
gj
–––
–––
–––
Notes

through
‰
are on page 10
Document Number: 91341
12/07/04
www.vishay.com
1

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Description Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 20A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Vishay Vishay Vishay Vishay Vishay Vishay
Parts packaging code TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA TO-251AA
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant unknown unknown unknown unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 120 mJ 120 mJ 120 mJ 120 mJ 120 mJ 120 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V 55 V 55 V
Maximum drain current (ID) 20 A 20 A 20 A 20 A 20 A 20 A
Maximum drain-source on-resistance 0.105 Ω 0.105 Ω 0.105 Ω 0.105 Ω 0.105 Ω 0.105 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA TO-251AA
JESD-30 code R-PSIP-T3 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PSIP-T3
JESD-609 code e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 3 2 2 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 60 A 60 A 60 A 60 A 60 A 60 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES YES YES NO
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE DUAL DUAL DUAL DUAL SINGLE
Maximum time at peak reflow temperature 30 30 30 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
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