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3SK142P

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CROSS PACK-4
CategoryDiscrete semiconductor    The transistor   
File Size310KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

3SK142P Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CROSS PACK-4

3SK142P Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-XRDB-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-XRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Minimum power gain (Gp)11.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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3SK142P Related Products

3SK142P 3SK142Q
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CROSS PACK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CROSS PACK-4
package instruction DISK BUTTON, O-XRDB-F4 DISK BUTTON, O-XRDB-F4
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 15 V 15 V
Maximum drain current (Abs) (ID) 0.03 A 0.03 A
Maximum drain current (ID) 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-XRDB-F4 O-XRDB-F4
Number of components 1 1
Number of terminals 4 4
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 135 °C 135 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.25 W 0.25 W
Minimum power gain (Gp) 11.5 dB 11.5 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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