Replaced by PVR33N
Data Sheet No. PD10028E
Series PVR33
Microelectronic Power IC
BOSFET
®
Photovoltaic Relay
Dual-Pole, 180mA, 0-300V AC/DC
General Description
The PVR33 Photovoltaic Relay is a dual-pole, normally
open solid state replacement for electro-mechanical
relays. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed
a BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized
by radiation from a dielectrically isolated light
emitting diode (LED).
The PVR overcomes the limitations of reed relays by
offering the solid state advantages of long life, high
operating speed, low pick-up power, bounce-free
operation, low thermal voltages and miniaturization.
These advantages allow product improvement and
design innovations in many applications such as
process control, multiplexing, telecommunications,
automatic test equipment and data acquisition.
The PVR can switch analog signals from thermo-
couple level to 300 volts peak AC or DC polarity.
Signal frequencies into the RF range are easily con-
trolled and switching rates up to 5kHz are achiev-
able. The extremely small thermally generated offset
voltages allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVR. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate
protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors,
diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVR microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
10
10
Operations
100µsec Operating Time
0.2µVolt Thermal Offset
5 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
16-pin DIP Package
-40°C to 85°C
n
n
n
n
n
n
n
n
n
E
ET
L
O
BS
O
Part Identification
Part Number
PVR2300
PVR3300
PVR3301
Operating
Voltage (AC/DC)
0 – 200V
0 – 300V
0 – 300V
Off-State
Resistance
10
8
Ohms
10
8
Ohms
10
10
Ohms
(BOSFET is a trademark of International Rectifier)
Series PVR33
Replaced by PVR33N
Electrical Specifications
(-40°C
≤
T
A
≤
+85°C unless otherwise specified)
INPUT CHARACTERISTICS
Minimum Control Current
(see figure 1)
For 20mA Continuous Load Current
For 100mA Continuous Load Current
For 20mA Continuous Load Current
Minimum Turn-Off Current
Minimum Turn-Off Voltage
Control Current Range
(Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
2.0
5.0
5.0
10
0.6
2.0 to 25
7.0
Units
DC
mA@25°C
mA@25°C
mA@85°C
µA(DC)
V(DC)
mA(DC)
V(DC)
OUTPUT CHARACTERISTICS
Operating Voltage Range
Maxiumum Load Current 40°C
(see figure 1)
Response Time @25°C
(see figure 7)
Maximum T(on) @ 12mA Control, 100 mA Load, 100 VDC
Maximum T(off) @ 12mA Control, 100 mA Load, 100 VDC
Maximum On-state Resistance 25°C (Pulsed) (fig. 2) 50 mA Load, 8mA Control
AC (A Connection)
DC (B Connection)
DC (C Connection)
Minimum Off-state Resistance 25°C
@ 160 VDC
PVR2300, PVR3300
@ 240 VDC
PVR3301
Maximum Thermal Offset Voltage @ 5.0mA Control
Minimum Off-State dv/dt
Output Capacitance
(see figure 3)
E
ET
L
O
S
B
O
PVR2300
±200
PVR3300, PVR3301
±300
Units
V
(peak)
AC (A Connection)
DC (B Connection)
DC (C Connection)
180
200
260
mA (peak)
mA
(DC)
mA
(DC)
µs
µs
150
50
24
12
6
10
8
10
10
0.2
1000
12
Ω
Ω
Ω
Ω
Ω
µvolts
V/µs
pF @ 50VDC
GENERAL CHARACTERISTICS (PVR2300, PVR3300, PVR1301)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 500V
DC
Maximum Capacitance: Input-Output
Maximum Lead Soldering Temperature
(1.6mm below seating plane for 10 sec.)
Ambient Temperature Range:
Operating
Storage
1500
10
9
1.0
260
-40 to +85
-40 to +100
Units
V
RMS
Ω
pF
°C
°C
2
Embedded System
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