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IRFC060PBF

Description
Power Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size44KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFC060PBF Overview

Power Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFC060PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRFC060PBF Related Products

IRFC060PBF IRFC1Z0 IRFC060
Description Power Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction UNCASED CHIP, R-XUUC-N3 UNCASED CHIP, R-XUUC-N2 UNCASED CHIP, R-XUUC-N3
Reach Compliance Code compliant unknown compliant
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 60 V 100 V 60 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XUUC-N3 R-XUUC-N2 R-XUUC-N3
Number of components 1 1 1
Number of terminals 3 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Is it lead-free? Lead free - Contains lead
Is it Rohs certified? conform to - incompatible
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED
Maximum time at peak reflow temperature 40 - NOT SPECIFIED
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